Metal induced crystallized poly-Si Thin Films and Thin Film Transistors

Abstract

Metal induced crystallization of a-Si was implemented by using nickel salt solution, nickel silicon oxide mixture, and a nano-layer of SiO2 mask. By using salt solution to form nickel media, the crystallization of a-Si started from many isolated sites and proceeded along radial directions at the isotropical crystallization rate under the optimized soaking conditions. By using nickel silicon oxide mixture, the crystallization of a-Si behaved an effect of self-controlled release of nickel, the poly-Si had low nickel residua under the induce holes and at the domain boundaries. By using a nano-layer of SiO2 mask to pre-define nucleation lines, the poly-Si composing of continuous zonal domain in exactly same width was obtained, the crystallization of a-Si started from some isolated sites inside the inducing windows, then proceeded along radial/lateral direction outside the windows. The characteristics of poly-Si TFTs made with these three different schemes were analyzed.