Metal Induced Crystallization

Mahamad, Ahamad Mohiddon; Krishna, Mamidipudi Ghanashyam

doi:10.5772/50064

Cited by 12 publications

(17 citation statements)

References 42 publications

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“…This result agrees with the data from [14] where it was shown that in planar film structure "amorphous Si on crystalline Sn" Si crystallizes and Sn dissolves at the edge of these films in the course of annealing at 300…500 C. The production of polycrystalline silicon film on metallic substrates by forming a joint eutectic layer due exchange of neighboring atoms of the metal and Si a  films was analyzed in [15] and the "mechanism of exchange layer" was suggested for interpretation.…”

Section: Resultssupporting

confidence: 82%

Tin doping effect on crystallization of amorphous silicon obtained by vapor deposition in vacuum

Neimash¹

2013

Semicond. Phys. Quantum Electron. Optoelectron.

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Abstract. The influence of tin impurity on amorphous silicon crystallization was investigated using the methods of Raman scattering, Auger spectroscopy at ion etching, scanning electron microscopy and X-ray fluorescence microanalysis in thin films of Si:Sn alloy manufactured by thermal evaporation. Formation of Si crystals of the 2 to 4-nm size has been found in the amorphous matrix alloy formed at the temperature 300 C. Total volume of nanocrystals correlates with the content of tin and can comprise as much as 80% of the film. The effect of tin-induced crystallization of amorphous silicon occurred only if there are clusters of metallic tin in the amorphous matrix. The mechanism of tin-induced crystallization of silicon that has been proposed takes into account the processes in eutectic layer at the interface metal tin -amorphous silicon.

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Section: Resultssupporting

confidence: 82%

Tin doping effect on crystallization of amorphous silicon obtained by vapor deposition in vacuum

Neimash¹

2013

Semicond. Phys. Quantum Electron. Optoelectron.

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“…These experimental results interpreted by the new MIC mechanism proposed in the papers [20][21][22]. It differs significantly from those known for other metals [13,[15][16][17]. According to this mechanism, silicon nanocrystals are formed due to cyclic repetition of formation and decomposition of a supersaturated silicon in tin solution on the narrow eutectic layer at a-Si/Sn interface of tin micro-droplets in amorphous Si volume.…”

Section: Introductionmentioning

confidence: 67%

“…One of promising ways in this direction is the use of metal-induced crystallization (MIC) of amorphous silicon [13][14][15][16][17]. In particular, the possibility to form Si nanocrystals in amorphous Si matrix at 2 to 5 nm sizes and the phase volume fraction up to 80% was shown by means of tin-stimulated crystallization of amorphous Si at low temperatures [18][19][20].…”

Section: Introductionmentioning

confidence: 99%

Tin-induced crystallization of amorphous silicon assisted by a pulsed laser irradiation

Neimash¹

2017

Semicond. Phys. Quantum Electron. Optoelectron.

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Abstract. The process of tin-induced crystallization of amorphous silicon under the influence of different types of laser irradiation was investigated using the method of Raman scattering by thin-film Si-Sn-Si structures. The dependences of the size and concentration of Si nanocrystals on the power of laser radiation was experimentally evaluated and analyzed. As sources of excitation pulse laser radiation with the pulses duration equal to 20 ns and 150 μs and wavelengths equal to 535 and 1070 nm was used. The possibility of efficient tin-induced transformation of silicon from amorphous phase to crystalline one in the 200-nm thick layers of a-Si under the action of laser pulses with duration equal to 20 ns was shown. The spatial and temporal distributions of laser induced temperature rise was calculated to interpret experimental results.

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“…In particular, a possibility to form Si nanocrystals 2-7 nm in dimensions and with a phase volume fraction of up to 80% in the a-Si matrix with the help of the low-temperature tin-induced Si crystallization was demonstrated in [18][19][20]. Those experimental results were interpreted with the use of a new mechanism of MIC, which was proposed in works [20][21][22] and considerably differs from those known for other metals [13,[15][16][17]. According to this mechanism, silicon nanocrystals are formed as a result of the cyclic repetition of their formation and decay pro-cesses in the supersaturated solution of silicon in tin that emerges in a narrow eutectic layer at the a-Si/Sn interfaces between tin microdroplets and the bulk of amorphous Si.…”

Section: Introductionmentioning

confidence: 88%

“…One of the promising ways in this direction is the application of the phenomenon of metal-induced crystallization (MIC) of amorphous silicon (a-Si) [13][14][15][16][17]. In particular, a possibility to form Si nanocrystals 2-7 nm in dimensions and with a phase volume fraction of up to 80% in the a-Si matrix with the help of the low-temperature tin-induced Si crystallization was demonstrated in [18][19][20].…”

Section: Introductionmentioning

confidence: 99%