Memory cell using Modified Field Effect Diode

Amirmazlaghani, Mina; Raissi, Farshid

doi:10.1587/elex.6.1582

Cited by 24 publications

(6 citation statements)

References 2 publications

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“…We have shown that field-effect diodes (FEDs) have superior characteristics over silicon-on-insulator metal-oxide-semiconductor field-effect transistors (SOI-MOSFETs) due to suppressed short-channel effects [2]- [4]. FEDs have been used for electrostatic-discharge protection [5]- [7] and memory-cell applications [8], [9].…”

Section: Performance Assessment Of Nanoscalementioning

confidence: 99%

Performance Assessment of Nanoscale Field-Effect Diodes

Manavizadeh

Raissi

Soleimani

et al. 2011

IEEE Trans. Electron Devices

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We propose a new structure called a side-contacted field-effect diode (FED). The fabrication of this new structure is simple, and it offers good electrical characteristics. Furthermore, a comprehensive analysis of FEDs is presented. The effect of heavydoping-induced band-gap narrowing on the performance of FEDs is investigated. Our results show that the calculated I on /I off ratio is at least two orders of magnitude larger than that obtained from models neglecting this effect. The figures of merit including intrinsic gate delay time, the energy-delay product, and the subthreshold slope have been studied. Our numerical investigations of the scaling of FEDs indicate that, in the nanometer regime, FEDs have a higher I on /I off ratio. The results demonstrate that FEDs are interesting candidates for future logic applications. Index Terms-Band gap narrowing, double gate, field effect diode (FED), nano transistor, short channel effects, side-contacted.

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Section: Performance Assessment Of Nanoscalementioning

confidence: 99%

Performance Assessment of Nanoscale Field-Effect Diodes

Manavizadeh

Raissi

Soleimani

et al. 2011

IEEE Trans. Electron Devices

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“…Among proposed alternative structures, modified Field Effect diode is introduced for high-performance and low-power applications [1,2,3,4,5,6,7,8].…”

Section: A Brief Of Nanoscale Field Effect Diodementioning

confidence: 99%

“…The nanoscale Field Effect Diode is considered one of the most promising structure to suppress the short channel effects for a given equivalent gate oxide thickness by using multiple gates to control the channel [1,2,3,4,5,6,7,8].…”

Section: Introductionmentioning

confidence: 99%

A novel ultra low-energy sub-threshold inverter based on nanoscale Field Effect Diode

Jazayeri

Sammak

Forouzandeh

et al. 2010

IEICE Electron. Express

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A novel sub-threshold inverter based on nanoscale Field Effect Diode (FED) and a basic static CMOS inverter are investigated in this paper. Simulation results demonstrate that power consumption and Power Delay Product (PDP) of the sub-threshold inverter which is designed with nanoscale FED are 57.9% and 18.21% less than these factors in a comparable CMOS sub-threshold inverter. So the nanoscale FED scheme can provide better power efficiency than standard subthreshold CMOS inverters.

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“…Therefore, the I ON /I OFF ratio, one of the most important parameters in digital applications, is more in this device than the field-effect transistors with similar dimensions [5,6]. The FEDs have different applications such as electrostatic discharge (ESD) [7,8] and memory cells [9][10][11], and also can be used to design integrated circuits [12][13][14]. The OFF-state current is an important parameter in the FEDs, therefore it is desirable to be as small as possible.…”

Section: Introductionmentioning

confidence: 99%

Nanoscale field effect diode (FED) with improved speed and I _ON / I _OFF ratio

Rezaei¹,

Azizollah-Ganji²,

Gholipour³

2019

IET Circuits, Devices & Systems

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Field effect diodes (FEDs) are devices that have higher ON current and lower OFF current compared to metal oxide semiconductor field effect transistors in similar dimensions. The modified FED and side contacted FED (S-FED) structures do not turn off for 40 nm channel lengths and shorter by considering the band-to-band tunnelling model. In this study, a new structure of FED with a 25 nm channel is presented. In this structure, the use of isolating oxides and reservoirs in the channel causes improvement in the structural compared to the conventional FED structures. The proposed techniques reduce the tunnelling in the channel. The simulations have been done by using Silvaco TCAD. In the proposed structure, the results show that the OFF current and gate delay are decreased from 1.5 mA to 66.5 nA and 0.103 to 0.033 ps, respectively. Also, compared with the S-FED structure by considering the band-to-band tunnelling model, the knee voltage for the length of the 25 nm channel dropped from 0.8 to 0.4 volts. Furthermore, the I ON /I OFF ratio, which is an important parameter in digital applications, dramatically increases to a magnitude of 10 5 .

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Memory cell using Modified Field Effect Diode

Cited by 24 publications

References 2 publications

Performance Assessment of Nanoscale Field-Effect Diodes

Performance Assessment of Nanoscale Field-Effect Diodes

A novel ultra low-energy sub-threshold inverter based on nanoscale Field Effect Diode

Nanoscale field effect diode (FED) with improved speed and I _ON / I _OFF ratio

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Memory cell using Modified Field Effect Diode

Cited by 24 publications

References 2 publications

Performance Assessment of Nanoscale Field-Effect Diodes

Performance Assessment of Nanoscale Field-Effect Diodes

A novel ultra low-energy sub-threshold inverter based on nanoscale Field Effect Diode

Nanoscale field effect diode (FED) with improved speed and I ON / I OFF ratio

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Product

Resources

About

Nanoscale field effect diode (FED) with improved speed and I _ON / I _OFF ratio