We propose a new structure called a side-contacted field-effect diode (FED). The fabrication of this new structure is simple, and it offers good electrical characteristics. Furthermore, a comprehensive analysis of FEDs is presented. The effect of heavydoping-induced band-gap narrowing on the performance of FEDs is investigated. Our results show that the calculated I on /I off ratio is at least two orders of magnitude larger than that obtained from models neglecting this effect. The figures of merit including intrinsic gate delay time, the energy-delay product, and the subthreshold slope have been studied. Our numerical investigations of the scaling of FEDs indicate that, in the nanometer regime, FEDs have a higher I on /I off ratio. The results demonstrate that FEDs are interesting candidates for future logic applications. Index Terms-Band gap narrowing, double gate, field effect diode (FED), nano transistor, short channel effects, side-contacted.

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