A novel ultra low-energy sub-threshold inverter based on nanoscale Field Effect Diode

Abstract

A novel sub-threshold inverter based on nanoscale Field Effect Diode (FED) and a basic static CMOS inverter are investigated in this paper. Simulation results demonstrate that power consumption and Power Delay Product (PDP) of the sub-threshold inverter which is designed with nanoscale FED are 57.9% and 18.21% less than these factors in a comparable CMOS sub-threshold inverter. So the nanoscale FED scheme can provide better power efficiency than standard subthreshold CMOS inverters.

Review of Power Conditioning for Kinetic Energy Harvesting Systems

“…Integrated designs achieve sub-5 μW quiescent power consumption for switch-mode converters [91] and thus make this converter type a suitable candidate for microscale energy harvesting applications. Power consumption could potentially be reduced further thanks to emerging semiconductor devices, such as the nanoscale field effect diode that is shown to halve the power consumption of an inverter design when compared to subthreshold CMOS technology [92].…”

Digital circuit analysis of insulated shallow extension silicon on void (ISESOV) FET for low voltage applications

“…Below 90nm channel length, the reduction in off state leakage (i.e. higher leakage current I off ) becomes an increasingly difficult technological challenge [1]. However I off can be utilized as the operating current in ultra low power applications such as medical devices.…”