Manipulation of K center charge states in silicon nitride films to achieve excellent surface passivation for silicon solar cells

Sharma, Vivek; Tracy, Clarence; Schroder, D.K.; Herasimenka, Stanislau; Dauksher, William J.; Bowden, Stuart

doi:10.1063/1.4863829

Cited by 28 publications

(36 citation statements)

References 20 publications

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“…PECVD nitride has been widely used for field-effect passivation of silicon solar cells [14][15][16] stable 14,17 and scalable process. 18 Silicon nitride, as grown by PECVD, contains a high density of positive charge centers which originate from + Si≡N 3 dangling bonds known as K + centers, 19 shown in Figure 1(a), with their density being controllable by the deposition process parameters.…”

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confidence: 99%

Air stable n-doping of WSe2 by silicon nitride thin films with tunable fixed charge density

et al. 2014

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Stable n-doping of WSe2 using thin films of SiNx deposited on the surface via plasma-enhanced chemical vapor deposition is presented. Positive fixed charge centers inside SiNx act to dope WSe2 thin flakes n-type via field-induced effect. The electron concentration in WSe2 can be well controlled up to the degenerate limit by simply adjusting the stoichiometry of the SiNx through deposition process parameters. For the high doping limit, the Schottky barrier width at the metal/WSe2 junction is significantly thinned, allowing for efficient electron injection via tunneling. Using this doping scheme, we demonstrate air-stable WSe2 n-MOSFETs with a mobility of ∼70 cm2/V s.

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confidence: 99%

Air stable n-doping of WSe2 by silicon nitride thin films with tunable fixed charge density

et al. 2014

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“…Figure shows the effective minority carrier lifetime ( τ eff ) of an n‐type FZ wafer with both sides symmetrically passivated by 150 nm‐thick PSS thin film. PSS SP layer achieves an τ eff value (2.3 ms at a minority carrier density of 10 15 cm −3 ) approaching that of SiN x , suggesting that PSS thin film can function as a passivation scheme simultaneously. The passivation mechanism involves PSS/Si interface properties and is discussed in another paper .…”

Section: Resultsmentioning

confidence: 93%

Polymer Thin Films for Anti‐Reflection and Passivation on the Front Surface of Interdigitated Back Contact c‐Si Solar Cell

et al. 2017

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In this work, a polymer thin film, polystyrenesulfonate (PSS), is employed in interdigitated back contact (IBC) solar cells as an anti‐reflection (AR) coating and front surface passivation (SP) layer. It is found that PSS thin film is highly transparent and possesses a refraction index of about 1.5, and thus functions well as AR coating for Si wafer‐based solar cells. An effective minority carrier lifetime of 2.3 ms is obtained on 1–5 Ω · cm n‐type crystalline Si wafer with both sides symmetrically coated by PSS thin film, proving a good Si surface passivation by this polymer. An increase in power conversion efficiency is obtained when 150 nm‐thick PSS thin film is coated on the front surface of IBC solar cells without any AR/SP layers, resulted from the increased short circuit current density and open circuit voltage. This work opens up a new approach using organic polymer thin film deposited with low temperature and vacuum‐free technique as AR/SP multifunctional layer in Si solar cells.

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“…The second concurrent effect is related to its interaction with a positively charged film. As the PECVD SiN x generally exhibits positive charges within the dielectric film, 35,36 it is possible that the trapping of charges from the K centres in SiN x reduces with increasing distance between Si and SiN x. 37 …”

Section: Ono Surface Passivation On Phosphorus and Boron‐diffused Surmentioning

confidence: 99%

Excellent ONO passivation on phosphorus and boron diffusion demonstrating a 25% efficient IBC solar cell

Kho

Fong

Stocks

et al. 2020

Progress in Photovoltaics

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This work presents results of a laboratory‐scale interdigitated back contact (IBC) solar cell with an independently measured efficiency of 25.0%, featuring open‐circuit voltage of 716 mV, short‐circuit current of 43.0 mA.cm−2 and fill factor of 81.0%. Notably, the high efficiency was achieved based on significant improvements resulting from the optimised cell structure, excellent SiO2‐SiNx‐SiOx (ONO) surface passivation, detailed bulk lifetime management strategy and improved random pyramid texturing. Experimental details and analysis of the individual improvements over prior work are presented in‐depth.

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Manipulation of K center charge states in silicon nitride films to achieve excellent surface passivation for silicon solar cells

Cited by 28 publications

References 20 publications

Air stable n-doping of WSe2 by silicon nitride thin films with tunable fixed charge density

Air stable n-doping of WSe2 by silicon nitride thin films with tunable fixed charge density

Polymer Thin Films for Anti‐Reflection and Passivation on the Front Surface of Interdigitated Back Contact c‐Si Solar Cell

Excellent ONO passivation on phosphorus and boron diffusion demonstrating a 25% efficient IBC solar cell

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