Air stable <i>n</i>-doping of WSe2 by silicon nitride thin films with tunable fixed charge density

Chen, Kevin; Kiriya, Daisuke; Hettick, Mark; Tosun, Mahmut; Ha, Tae‐Jun; Madhvapathy, Surabhi R.; Desai, Sunil R.; Sachid, Angada B.; Javey, Ali

doi:10.1063/1.4891824

Cited by 83 publications

(84 citation statements)

References 33 publications

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“…Peak shifts with such characteristics toward the lower frequency side result from the softening in Raman vibrations at elevated electron concentrations . A similar peak movement tendency has also been reported in WSe 2 and MoS 2 with electron doping and was attributed to the higher electron phonon coupling of the specific vibration modes. Even when the thickness of Al 2 O 3 increases, both B 2g and E 2g show the same peak position movements of 2.1 cm −1 regardless of the thickness, signifying that an ultrathin (3 nm thick) Al 2 O 3 layer can facilitate strong electron doping.…”

Section: Resultssupporting

confidence: 74%

Controllable P‐ and N‐Type Conversion of MoTe₂ via Oxide Interfacial Layer for Logic Circuits

Park

Katiyar

Hoang

et al. 2019

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To realize basic electronic units such as complementary metal‐oxide‐semiconductor (CMOS) inverters and other logic circuits, the selective and controllable fabrication of p‐ and n‐type transistors with a low Schottky barrier height is highly desirable. Herein, an efficient and nondestructive technique of electron‐charge transfer doping by depositing a thin Al2O3 layer on chemical vapor deposition (CVD)‐grown 2H‐MoTe2 is utilized to tune the doping from p‐ to n‐type. Moreover, a type‐controllable MoTe2 transistor with a low Schottky barrier height is prepared. The selectively converted n‐type MoTe2 transistor from the p‐channel exhibits a maximum on‐state current of 10 µA, with a higher electron mobility of 8.9 cm2 V−1 s−1 at a drain voltage (Vds) of 1 V with a low Schottky barrier height of 28.4 meV. To validate the aforementioned approach, a prototype homogeneous CMOS inverter is fabricated on a CVD‐grown 2H‐MoTe2 single crystal. The proposed inverter exhibits a high DC voltage gain of 9.2 with good dynamic behavior up to a modulation frequency of 1 kHz. The proposed approach may have potential for realizing future 2D transition metal dichalcogenide‐based efficient and ultrafast electronic units with high‐density circuit components under a low‐dimensional regime.

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Section: Resultssupporting

confidence: 74%

Controllable P‐ and N‐Type Conversion of MoTe₂ via Oxide Interfacial Layer for Logic Circuits

Park

Katiyar

Hoang

et al. 2019

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“…This high performance is achieved by (i) suppressing the interfacial carrier scattering with (3-aminopropyl)triethoxysilane (APTES) treatment and (ii) improving the source-side contact resistance through a triphenylphosphine (PPh 3 )-based n-doping technique. [ 40,41 ] This n-doping effect by the PPh 3 was also confi rmed in the MoS 2 samples, as shown in Figure 1 c,d. Then, the PPh 3 n-doping phenomenon is investigated in detail on ReSe 2and MoS 2 -based devices, in terms of the electronic (threshold voltage, fi eld-effect mobility, and carrier concentration) and optoelectronic (photoresponsivity and temporal photo response) device performances.…”

supporting

confidence: 65%

“…For the Raman analysis, we prepared ten different samples and measured at three different points in each sample. [ 40,41 ] This n-doping effect by the PPh 3 was also confi rmed in the MoS 2 samples, as shown in Figure 1 c,d. [ 37 ] Because of the low symmetry from the distorted triclinic structure, [ 38 ] there were many Raman peaks between 100 and 300 cm −1 ( Figure S1, Supporting Information), but precise E 2g and A 1g peaks were not observed unlike other conventional TMDs such as MoS 2 and WSe 2 .…”

supporting

confidence: 65%

Broad Detection Range Rhenium Diselenide Photodetector Enhanced by (3‐Aminopropyl)Triethoxysilane and Triphenylphosphine Treatment

Park

Kang

et al. 2016

Advanced Materials

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The effects of triphenylphosphine and (3-aminopropyl)triethoxysilane on a rhenium diselenide (ReSe2 ) photodetector are systematically studied by comparing with conventional MoS2 devices. This study demonstrates a very high performance ReSe2 photodetector with high photoresponsivity (1.18 × 10(6) A W(-1) ), fast photoswitching speed (rising/decaying time: 58/263 ms), and broad photodetection range (possible above 1064 nm).

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“…In addition to making the contact resistance lower, this kind of doping also reduces the width of the depletion region, thus making the contact more suit able for spin injection 118 . Chloride doping 95 in 5-7 layers of WS 2 (square symbol) has also been reported as a representative example of molecular doping 94,[119][120][121][122][123] , which is another way of decreasing R C . In Fig.…”

Section: Spin Injectionmentioning

confidence: 99%

Electrical contacts to two-dimensional semiconductors

et al. 2015

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Semiconducting electronic devices utilize fine control over the flow of charge carriers, which are injected into the semi conducting material through electrical contacts. The quality of the electrical contacts -quantified through contact resistance -is as important to the proper functioning of the entire device as the semiconductor (SC) itself. Since the early 1990s, researchers have explored a wide variety of electronic devices based on nanostruc tures with different dimensionalities, ranging from one dimensional (1D 20 and silicene 21 are also attracting growing interest. One of the most common electronic devices, in both the research and industrial environments, is the fieldeffect transistor (FET). Low contact resistance in 2D SCbased devices is critical for achiev ing high 'on' current, large photoresponse 22 and highfrequency operation 23 . However, the major issue for 2D SC FET transistors is the existence of a large contact resistance at the interface between the 2D SC and any bulk (or 3D) metal, which drastically restrains the drain current [24][25][26] . Contacting 2D SCs presents a certain number of experimental and conceptual challenges. The theoretical concepts that underlie our understanding of conventional metal-SC contacts break down in the limit where the SC thickness is smaller than the The performance of electronic and optoelectronic devices based on two-dimensional layered crystals, including graphene, semiconductors of the transition metal dichalcogenide family such as molybdenum disulphide (MoS 2 ) and tungsten diselenide (WSe 2 ), as well as other emerging two-dimensional semiconductors such as atomically thin black phosphorus, is significantly affected by the electrical contacts that connect these materials with external circuitry. Here, we present a comprehensive treatment of the physics of such interfaces at the contact region and discuss recent progress towards realizing optimal contacts for two-dimensional materials. We also discuss the requirements that must be fulfilled to realize efficient spin injection in transition metal dichalcogenides. depletion and transfer lengths. In the 2D limit, the properties of the interface -the chemical interaction between the metal and the SC -govern everything. Substitutional doping, a common strat egy adopted to decrease the contact resistance in bulk SCs, is not applicable here because it would modify both the 2D material and its properties. In addition, the pristine surface (that is, no dangling bonds) of a 2D material makes it difficult to form strong interface bonds with a metal, thereby increasing contact resistance.The quantum limit to the contact resistance (R C min ) is determined by the number of conducting modes within the SC channel 27,28 , which is connected to the 2D charge carrier density (n 2D ), yielding R C min = h/(2e 2 k F ) = 0.026/√n 2D ≈ 30 Ω μm at n 2D = 10 13 cm -2 (ref. 29) -a value three orders of magnitude below the typical contact resist ance to monolayer MoS 2 . Here, h is Planck's constant, k F is the Fermi wavevector a...

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Air stable n-doping of WSe2 by silicon nitride thin films with tunable fixed charge density

Cited by 83 publications

References 33 publications

Controllable P‐ and N‐Type Conversion of MoTe₂ via Oxide Interfacial Layer for Logic Circuits

Controllable P‐ and N‐Type Conversion of MoTe₂ via Oxide Interfacial Layer for Logic Circuits

Broad Detection Range Rhenium Diselenide Photodetector Enhanced by (3‐Aminopropyl)Triethoxysilane and Triphenylphosphine Treatment

Electrical contacts to two-dimensional semiconductors

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Air stable n-doping of WSe2 by silicon nitride thin films with tunable fixed charge density

Cited by 83 publications

References 33 publications

Controllable P‐ and N‐Type Conversion of MoTe2 via Oxide Interfacial Layer for Logic Circuits

Controllable P‐ and N‐Type Conversion of MoTe2 via Oxide Interfacial Layer for Logic Circuits

Broad Detection Range Rhenium Diselenide Photodetector Enhanced by (3‐Aminopropyl)Triethoxysilane and Triphenylphosphine Treatment

Electrical contacts to two-dimensional semiconductors

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Product

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Controllable P‐ and N‐Type Conversion of MoTe₂ via Oxide Interfacial Layer for Logic Circuits

Controllable P‐ and N‐Type Conversion of MoTe₂ via Oxide Interfacial Layer for Logic Circuits