Luminescence on dislocations in silicon

Drozdov, N. A.; Patrin, A. A.; Tkachev, V.D.; Chelyadinskii, A. R.

doi:10.1007/bf00609486

Cited by 14 publications

(14 citation statements)

References 2 publications

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“…Guided by the energy of the emission and by the sample preparation method the luminescence can be attributed to the dislocation-related optical center D1. The PL emission related to dislocation has been investigated before by Drozdov et al, 13 Sauer et al, 14 and Suezawa et al 15 Several lines were observed and interpreted as radiative transitions between a deep level and a shallow level related to the valence band. Under the assumption that the band variations have a more pronounced effect on the shallow rather than the deep level position, the increase in transition energy upon grain downsizing can be mainly assigned to downshift of the valence band.…”

Section: Introductionmentioning

confidence: 94%

Experimental investigation of band structure modification in silicon nanocrystals

et al. 2001

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Experimental studies of size-related effects in silicon nanocrystals are reported. We present investigations carried out on nanocrystals prepared from single-crystal Si:P wafer by ball milling. The average final grain dimension varied depending on the way of preparation in the range between 70 and 230 nm. The ball milling was followed by sedimentation and selection of the smallest grains. The initial grain size distribution was measured by scanning electron microscopy. Further reduction in size was achieved by oxidation at 1000°C which creates a silicon dioxide layer around a silicon core. The oxidation process was monitored by transmission electron microscopy and the growth speed of SiO 2 was estimated in order to model the grain size of nanocrystals. Crystallinity of silicon grains was confirmed by x-ray diffraction and by transmission electron microscopy using a bright/dark field method and selected area diffraction pattern. In the silicon nanocrystals the electron energy levels are shifted which was observed separately for conduction band, valence band and energy band gap. Electron paramagnetic resonance was applied to investigate variation of the conduction band minimum by monitoring its influence on the hyperfine interaction of phosphorus shallow donor. On the basis of these results an explicit expression for conduction band upshift as a function of average grain size has been derived. Information about the downshift of the valence band was obtained from measurements on a photoluminescence band related to a deep to shallow level transition. A perturbation of a few meV for grain sizes of the order about 100 nm has been observed. Internal consistency of these findings has been examined by investigation of the photoluminescence band due to an electron-hole recombination whose energy is directly related to the band gap of silicon.

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Section: Introductionmentioning

confidence: 94%

Experimental investigation of band structure modification in silicon nanocrystals

et al. 2001

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“…Since preliminary results of making light emitting diodes using heavily dislocated silicon [2] were very promising, considerable improvements of silicon-based optoelectronics are expected once our understanding of the nature of dislocation related luminescence has further improved. Dislocations in Si produce characteristic emission consisting of four lines, namely, D1 (0.81 eV), D2 (0.87 eV), D3 (0.94 eV), and D4 (1 eV) [3]. It must be noted that these positions are typical but not canonical ones and can vary within some limits.…”

Section: Introductionmentioning

confidence: 98%

Influence of oxygen on the dislocation related luminescence centers in silicon

Steinman

2005

phys. stat. sol. (c)

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Dislocation related luminescence (DRL) centres in Si have high stability to a thermal treatment of samples and a relatively low temperature quenching. These properties make them an attractive candidate for production of Si based light emitting diodes (LEDs). The low energy part of DRL in the vicinity of the D1 line is the most promising from this point of view due to its highest temperature stability and best coupling to fiber optics. Actually this part of DRL can be divided into several bands. One of them with a position 807 meV is known as D1 line. The substantial effect on D1 luminescence has oxygen. The line becomes broader and several subbands can be identified on the low and high energy side after prolonged annealing of deformed samples. Depending on particular treatment some of these bands could be even more intensive than the original D1 line. The strongest effect is usually observed in oxygen rich CZ crystals. In all cases the presence of dislocations is necessary for the appearance of the low energy bands. Several observations clearly show that the corresponding recombination centres include the dislocation related defect as well as some oxygen complexes. It implies that inclusion and mutual configuration of constituents defines the energy of optical transitions in the region of D1 band. In the present paper a review of previous investigations as well as new results regarding oxygen dislocations interaction are presented.

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“…PL result reflects the crystallinity related to photo-generated carrier's activity, so it is very important for photovoltaic application. The appearance, sharpening and position shift of TO-BE, TA-BE, D1 and tail-to-tail peaks can be used to judge the crystalline quality of poly-Si thin films, because they will be shifted to lower energy and broadened by residual strain which results from dislocations and point defects [4,[7][8][9][10][11]. In the case of poly-Si thin films on silicon substrates, TO-BE peak clearly increased with grain size enlargement as shown in Fig.…”

Section: Discussionmentioning

confidence: 99%