This note presents the results of experiments made in order to determine the nature of the luminescence lines associated with dislocations in silicon. This type of luminescence has been first described in our paper /1/.The experiments have been carried out at T = 4 . 2 and 7 7 K by means of measuring photoluminescence spectra under uniaxial deformation along < loo), (110), and (111) The transformation of spectra in the vicinity of the lines D1 and D2 under deformation is in principle quite different. The results for deformation along < 110) direction a r e shown in Fig. 1 (curves 2 , 3). Both components of the lines D1, D2
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