This note presents the results of experiments made in order to determine the nature of the luminescence lines associated with dislocations in silicon. This type of luminescence has been first described in our paper /1/.The experiments have been carried out at T = 4 . 2 and 7 7 K by means of measuring photoluminescence spectra under uniaxial deformation along < loo), (110), and (111) The transformation of spectra in the vicinity of the lines D1 and D2 under deformation is in principle quite different. The results for deformation along < 110) direction a r e shown in Fig. 1 (curves 2 , 3). Both components of the lines D1, D2

The matrix distortion influence on the noble gas atoms He and Ne introduced into diamond by ion implantation is discovered and explained. Consequences of the effect mentioned are the chemical activity of the noble gas atoms in diamond lattice and the formation of stable impurity-defect complexes, as it follows from the investigation of Mossbauer-type luminescence spectra.

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The behaviour of noble gas atoms implanted in silicon is studied by the luminescence method. The energy position of Mossbauer-type luminescence bands with zero-phonon lines 1.0148, 1.0120, 1.0097, 1.0048 eV and others connected with implanted atoms of neon, helium, argon, krypton, respectively, indicates the formation of deep energy levels in the forbidden gap of silicon. Implantation of the noble gas isotopes confirms their participation in formation processes of the luminescence centers in silicon. The temperature range of existence and the symmetry of defects incorporating the noble gas atoms are found. It is noted that noble gas atoms form impurity complexes with deep energy levels and their behaviour in crystals does not differ from that of main doped or residual technological impurity atoms.-~ 1) Leninskii prospekt 65, Minsk 220027, USSR.

b) Cathodoluminescence of Cubic Boron Nitride -Mossbauer-Type Spectra (1985) 2 ) BY V.D. TKACHEV (a, b), V.B. SHEPILO (b), and A.M. ZAITSEV (a) Cubic boron nitride ( p-BN) being a representative of A%' group semiconductors possesses a number of unique physical properties, such as wide band gap (about 6 eV), high thermal conductivity, perhaps the highest value of Debye temperature among semiconductor crystals. These peculiarities make the material a very promising one for the production of semiconductor devices which krill be able t o operate under extreme conditions. This is the case, particularly, for optoelectronic devices. At present, however, there is practically no information about optical properties of cubic boron nitride /I/. This situation, perhaps, results from the difficulties in growth technology of both large p-BN monocrystals and polycrystals.