On the nature of the dislocation luminescence in silicon

Abstract

This note presents the results of experiments made in order to determine the nature of the luminescence lines associated with dislocations in silicon. This type of luminescence has been first described in our paper /1/.The experiments have been carried out at T = 4 . 2 and 7 7 K by means of measuring photoluminescence spectra under uniaxial deformation along < loo), (110), and (111) The transformation of spectra in the vicinity of the lines D1 and D2 under deformation is in principle quite different. The results for deformation along < 110) direction a r e shown in Fig. 1 (curves 2 , 3). Both components of the lines D1, D2

Luminescence emission from forward- and reverse-biased multicrystalline silicon solar cells

“…The impact of dislocations on photoluminescence spectra was first addressed by Drozdov et al, 30 who found that at liquid helium temperature ͑4 K͒ dislocations in silicon give rise to four photoluminescence lines labeled D1 ͑0.812 eV͒, D2 ͑0.875 eV͒, D3 ͑0.934 eV͒, and D4 ͑1.000 eV͒. Carrier recombination at dislocations occurs primarily due to the presence of metallic impurities.…”

Sulphur doped silicon light emitting diodes

“…Several investigations in the past years have documented that dislocations in silicon give rise to characteristic photoluminescence (PL) spectra below the band edge. Drozdov et al [40,41] were the first to show in 1976 that four lines are related to dislocations which they labelled as D1 (0.812 eV), D2 (0.875 eV), D3 (0.934 eV) and D4 (1.000 eV). Those lines were introduced by deformation.…”

Intrinsic Defects and the D1 to D4 Optical Bands Detected in Plastically Deformed Si

“…The origin of the photoluminescent bands D1 to D4 at 0.807, 0.870, 0.935 and 1.0 eV connected with dislocations in silicon has been a major problem even after almost a quarter of century of investigation 1 . The recent observations 2 of room temperature electroluminescence from D1 and D2 has spurred further activity.…”