Noble Gas Atoms as Chemical Impurities in Silicon

Abstract

The behaviour of noble gas atoms implanted in silicon is studied by the luminescence method. The energy position of Mossbauer-type luminescence bands with zero-phonon lines 1.0148, 1.0120, 1.0097, 1.0048 eV and others connected with implanted atoms of neon, helium, argon, krypton, respectively, indicates the formation of deep energy levels in the forbidden gap of silicon. Implantation of the noble gas isotopes confirms their participation in formation processes of the luminescence centers in silicon. The temperature range of existence and the symmetry of defects incorporating the noble gas atoms are found. It is noted that noble gas atoms form impurity complexes with deep energy levels and their behaviour in crystals does not differ from that of main doped or residual technological impurity atoms.-~ 1) Leninskii prospekt 65, Minsk 220027, USSR.

Chemical Activity of Noble Gases in Diamond

“…The rather complicated spectrum of the NG centre is perhaps due to its compound structure containing several Ne atoms. It is worth mentioning that a luminescence centre of the same spectral structure was observed in Ar+ implanted silicon [3], but its thermal stability was much lower. The considerable reduction of the NG centre intensity after 700 "C annealing and simultaneous formation of the 518 nm centre in this range of temperature may be explained by its reconstruction due to the interaction with vacancies annealing at 700 "C. The relatively low thermal stability of the 525, 519, and 515.5 nm centres (see Fig.…”

Photoluminescence studies of Sn quantum dots in Si grown by MBE

“…The sharp feature observed at 1018 meV corresponds to W or I1 band. Although the exact means of creating the 1018 meV peak is not clear, it can be associated with radiation damage in Si [17] and ion implantation damage [18]. In Fig.…”

Theoretical analysis of the chemical activivity of noble gas atoms in silicon

“…3, The study of the defect annealing [l, 21 suggests a small bond energy of noble gas atoms with the silicon lattice. The above-mentioned phonon side bands due to Si-Ar interaction show also a relatively low energy (hv = 0.029 eV [2]). to bring these differences to zero the radius of an Ar sphere should be reduced t o 0.1508 nm, while that of a Si sphere should be increased to 0.1562 nm.…”

“…However, the experimental data on implantation of noble gas isotopes [2] point t o an additional line in the vibration structure of the luminescence spectra, the energy shift Ahv of which from the zero-phonon line depends on isotope mass. As the ratio of energy shifts Ahv for 22Ne and 20Ne is almost the same as the reverse ratio of the square root of the corresponding isotope masses [2], the appearance of quasilocal phonon modes may serve as a direct indication of a chemical bond between silicon atoms and implanted noble gas atoms. The chemical activity exhibited by light noble gas atoms (He, Ne, Ar) implanted into silicon is of great interest.…”