Crystallographic properties of grain size-controlled polycrystalline silicon thin films deposited on alumina substrate

Ogane, Akiyoshi; Honda, Shinya; Uraoka, Yukiharu; Fuyuki, Takashi; Fejfar, A.; Kočka, J.

doi:10.1016/j.jcrysgro.2008.09.098

Cited by 5 publications

(6 citation statements)

References 8 publications

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“…). (7) Note that this expression is for the time interval with V d = −50 V. We have not attempted to fit the later time part because the state of the interface with regard to the bias stress effect is not well known when switching from a higher field to a lower one. The data in Fig.…”

Section: B Reversible Hole Trapping/detrappingmentioning

confidence: 99%

“…Conjugated polymers and organic small molecules such as polythiophenenes 1,2 and pentacenes [3][4][5] are of current interest because of their potential for low cost large area fabrication of various electronic devices such as solar cells, [6][7][8] light-emitting diodes 9 and thin film transistors. [10][11][12][13][14] Organic semiconductor devices have advanced rapidly in terms of overall performance since mobilities exceeding 1 cm 2 V −1 s −1 were first demonstrated in pentacene thin film transistors.…”

Section: Introductionmentioning

confidence: 99%

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Fabrication and characterization of controllable grain boundary arrays in solution-processed small molecule organic semiconductor films

Headrick

Anthony

2012

Journal of Applied Physics

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We have produced solution-processed thin films of 6,13-bis(triisopropyl-silylethynyl) pentacene with grain sizes from a few micrometers up to millimeter scale by lateral crystallization from a rectangular stylus. Grains are oriented along the crystallization direction, and the grain size transverse to the crystallization direction depends inversely on the writing speed, hence forming a regular array of oriented grain boundaries with controllable spacing. We utilize these controllable arrays to systematically study the role of large-angle grain boundaries in carrier transport and charge trapping in thin film transistors. The effective mobility scales with the grain size, leading to an estimate of the potential drop at individual large-angle grain boundaries of more than one volt. This result indicates that the structure of grain boundaries is not molecularly abrupt, which may be a general feature of solution processed small molecule organic semiconductor thin films where relatively high energy grain boundaries are typically formed. This may be due to the crystal Transient measurements after switching from positive to negative gate bias or between large and small negative gate bias reveal reversible charge trapping with time constants on the order of 10 s, and trap densities that are correlated with grain boundary density. We suggest that charge diffusion along grain boundaries and other defects is the rate determining mechanism of the reversible trapping.

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Section: B Reversible Hole Trapping/detrappingmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Fabrication and characterization of controllable grain boundary arrays in solution-processed small molecule organic semiconductor films

Headrick

Anthony

2012

Journal of Applied Physics

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“…This suggests one possible method to make interfaces and layers in poly-Si films. Ogane [9] has experimentally observed a similar phenomenon and explained that it is due to the increase in crystallite size during the deposition pause. However, the time scale in the experiments is orders of magnitude longer than in our simulations.…”

Section: Growth On Amorphous Si Substratesmentioning

confidence: 73%

“…Using scanning electron microscope (SEM) Ogane [9] studied substrate preparation and grain size controlling of poly-Si films. He also studied surface structures of poly-Si using Kelvin force microscopy.…”

Section: Introductionmentioning

confidence: 99%

Polycrystalline silicon, a molecular dynamics study: I. Deposition and growth modes

Santonen,

Lahti,

Jahanshah Rad

et al. 2024

Modelling Simul. Mater. Sci. Eng.

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Polycrystalline silicon (poly-Si) significantly expands the properties of the ICT miracle material, silicon (Si). Depending on the grain size and shape as well as the grain boundary structure, the properties of poly-Si exceed what single crystal (c-Si) and amorphous (a-Si) silicon can offer, especially for radio frequency (RF) applications in microelectronics. Due to its wide range of applications and, on the one hand, its theoretically and technologically challenging microstructure, poly-Si research is the most timely. In this report, we describe how we simulate and analyse the phenomena and mechanisms that control the effect of poly-Si deposition parameters on the structure of the deposited poly-Si films using classical molecular dynamics simulations. The grain shape and size, degree of crystallinity, grain boundary structure and the stress of poly-Si films are determined depending on the growth temperature, temperature distribution in the growing film, deposition flux, flux variation and the energy transferred to the film surface due to the deposition flux.The main results include: (i) the dependence of the crystallinity profile of the deposited poly-Si films on the stress, temperature and the different parameters of the deposition flux, (ii) growth modes at the early stages of the deposition, (iii) interaction and stability of seed crystallites at the early stage of the deposition of poly-Si films and the transition from the isolated crystallite growth to the poly-Si growth, (iv) interplay of the temperature, crystallinity, crystal shape and heath conductivity of different Si phases, (v) four different stages of crystallite growth are described: nucleation, growth, disappearance and retardation.

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“…10) Therefore, different methods have been tried to increase grain sizes of polycrystalline Si active layers on the isolation layers. [11][12][13][14][15][16][17] It is worth mentioning that Ehrenwall et al prepared 40 m thick polycrystalline Si (poly-Si) films on a ceramic substrate by using atmospheric pressure CVD (APCVD), and increased the maximum grain size from 3 to 30 m by controlling the nucleation phase on the substrate. 18) According to previous studies, 10,18,19) the inhomogeneous nucleation on a substrate can result in larger grain size than the homogeneous nucleation because of the competitive grain growth.…”

Section: Introductionmentioning

confidence: 99%

Epitaxial Growth of Silicon Films on SiO₂ Patterned Si(100) Substrates by Atmospheric Pressure Chemical Vapor Deposition

Duan¹,

Deng²,

Ai³

et al. 2012

Jpn. J. Appl. Phys.

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We study the level spacing distribution p(s) in the spectrum of random networks. According to our numerical results, the shape of p(s) in the Erdős-Rényi (E-R) random graph is determined by the average degree k and p(s) undergoes a dramatic change when k is varied around the critical point of the percolation transition, k = 1. When k 1, the p(s) is described by the statistics of the Gaussian orthogonal ensemble (GOE), one of the major statistical ensembles in Random Matrix Theory, whereas at k = 1 it follows the Poisson level spacing distribution. Closely above the critical point, p(s) can be described in terms of an intermediate distribution between Poisson and the GOE, the Brodydistribution. Furthermore, below the critical point p(s) can be given with the help of the regularized Gamma-function. Motivated by these results, we analyse the behaviour of p(s) in real networks such as the internet, a word association network and a protein-protein interaction network as well. When the giant component of these networks is destroyed in a node deletion process simulating the networks subjected to intentional attack, their level spacing distribution undergoes a similar transition to that of the E-R graph.

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Crystallographic properties of grain size-controlled polycrystalline silicon thin films deposited on alumina substrate

Cited by 5 publications

References 8 publications

Fabrication and characterization of controllable grain boundary arrays in solution-processed small molecule organic semiconductor films

Fabrication and characterization of controllable grain boundary arrays in solution-processed small molecule organic semiconductor films

Polycrystalline silicon, a molecular dynamics study: I. Deposition and growth modes

Epitaxial Growth of Silicon Films on SiO₂ Patterned Si(100) Substrates by Atmospheric Pressure Chemical Vapor Deposition

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Crystallographic properties of grain size-controlled polycrystalline silicon thin films deposited on alumina substrate

Cited by 5 publications

References 8 publications

Fabrication and characterization of controllable grain boundary arrays in solution-processed small molecule organic semiconductor films

Fabrication and characterization of controllable grain boundary arrays in solution-processed small molecule organic semiconductor films

Polycrystalline silicon, a molecular dynamics study: I. Deposition and growth modes

Epitaxial Growth of Silicon Films on SiO2 Patterned Si(100) Substrates by Atmospheric Pressure Chemical Vapor Deposition

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Product

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Epitaxial Growth of Silicon Films on SiO₂ Patterned Si(100) Substrates by Atmospheric Pressure Chemical Vapor Deposition