Infrared absorption in silicon from shallow thermal donors incorporating hydrogen and a link to the NL10 paramagnetic resonance spectrum Newman, R.C.; Tucker, J.H.; Semaltianos, N.G.; Lightowlers, E.C.; Gregorkiewicz, T.; Zevenbergen, I.; Ammerlaan, C.A.J. Published in:Physical Review. B, Condensed Matter DOI:10.1103/PhysRevB.54.R6803 Link to publication Citation for published version (APA):Newman, R. C., Tucker, J. H., Semaltianos, N. G., Lightowlers, E. C., Gregorkiewicz, T., Zevenbergen, I., & Ammerlaan, C. A. J. (1996). Infrared absorption in silicon from shallow thermal donors incorporating hydrogen and a link to the NL10 paramagnetic resonance spectrum. Physical Review. B, Condensed Matter, 54, R6803-R6806. DOI: 10.1103/PhysRevB.54.R6803 General rightsIt is not permitted to download or to forward/distribute the text or part of it without the consent of the author(s) and/or copyright holder(s), other than for strictly personal, individual use, unless the work is under an open content license (like Creative Commons). Disclaimer/Complaints regulationsIf you believe that digital publication of certain material infringes any of your rights or (privacy) interests, please let the Library know, stating your reasons. In case of a legitimate complaint, the Library will make the material inaccessible and/or remove it from the website. Please Ask the Library: http://uba.uva.nl/en/contact, or a letter to: Library of the University of Amsterdam, Secretariat, Singel 425, 1012 WP Amsterdam, The Netherlands. You will be contacted as soon as possible. Shallow thermal donors ͑STDs͒, generated in Czochralski silicon, annealed at 470°C in a hydrogen plasma, and detected by their infrared ͑IR͒ electronic absorption, have ground states that shift slightly (ϳ0.1 cm Ϫ1 ) to smaller binding energies, when deuterium is introduced instead of hydrogen, demonstrating the presence of a hydrogen atom in the donor core. No other IR spectrum is detected apart from that from neutral double thermal donors ͑TDs͒. The same optical transitions are observed in three annealed samples given a preheat treatment in water vapor. These latter samples show the NL10 electron-paramagnetic-resonance ͑EPR͒ spectrum, recently attributed to hydrogen passivated TDs. The relative strengths of the EPR NL10 spectra correlate with those of the STD IR spectra, providing a strong indication that both spectra arise from the same defects.

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Role of hydrogen in the formation and structure of the Si,-NL10 thermal donor Martynov, I.; Gregorkiewicz, T.; Ammerlaan, C.A.J.

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Abstract. The oxygen isotope sMs of the vibrational modes of interslitid oxygen in silicon, obtained *om isotopically enriched silicon samples, are mmpared with the predictions of a calculation based on a bond-centred location of the 0 atom, as is obtained from fint principles. This camparjson canfirms Ihe existence a f a Raman-active mode in which the 0 atom is weakly involved and of a resonance producing a broadening and a small shift of the " 0 asymmetric mode

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Experimental studies of size-related effects in silicon nanocrystals are reported. We present investigations carried out on nanocrystals prepared from single-crystal Si:P wafer by ball milling. The average final grain dimension varied depending on the way of preparation in the range between 70 and 230 nm. The ball milling was followed by sedimentation and selection of the smallest grains. The initial grain size distribution was measured by scanning electron microscopy. Further reduction in size was achieved by oxidation at 1000°C which creates a silicon dioxide layer around a silicon core. The oxidation process was monitored by transmission electron microscopy and the growth speed of SiO 2 was estimated in order to model the grain size of nanocrystals. Crystallinity of silicon grains was confirmed by x-ray diffraction and by transmission electron microscopy using a bright/dark field method and selected area diffraction pattern. In the silicon nanocrystals the electron energy levels are shifted which was observed separately for conduction band, valence band and energy band gap. Electron paramagnetic resonance was applied to investigate variation of the conduction band minimum by monitoring its influence on the hyperfine interaction of phosphorus shallow donor. On the basis of these results an explicit expression for conduction band upshift as a function of average grain size has been derived. Information about the downshift of the valence band was obtained from measurements on a photoluminescence band related to a deep to shallow level transition. A perturbation of a few meV for grain sizes of the order about 100 nm has been observed. Internal consistency of these findings has been examined by investigation of the photoluminescence band due to an electron-hole recombination whose energy is directly related to the band gap of silicon.