EPR spectra of heat-treatment centers in oxygen-rich silicon

Müller, Sara; Sprenger, M.; Sieverts, Eric; Ammerlaan, C.A.J.

doi:10.1016/0038-1098(78)90889-x

Cited by 146 publications

(40 citation statements)

References 9 publications

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“…H + implantations in the dose range of 10 13 -10 15 H + /cm² and anneals in the temperature range from 350 °C to 550 °C are used to form H-related thermal donor complexes [2,11]. The concentration and type of these thermal donors strongly depend on the annealing temperature and annealing time [12][13][14][15][16] the formation and dissociation process of these donor complexes was investigated in various studies using deep level transient spectroscopy [17], infra-red spectroscopy [18], electron paramagnetic resonance [19] and spreading resistance profiling [20]. One important application of H + implantation doping is as a field stop of an Isolated Gate Bipolar Transistor (IGBT) [8].…”

Section: Introduction Because Protons (H +mentioning

confidence: 99%

High dose proton implantations into silicon: a combined EBIC, SRP and TEM study

Kirnstoetter

Faccinelli

Gspan

et al. 2014

Phys. Status Solidi C

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Proton (H+) implantations are used in power semiconductor devices to introduce recombination centers (Hazdra et al., Microelectron. J. 32(5), 449–456 (2001)) or to form hydrogen related donor complexes (Zohta et al., Jpn. J. Appl. Phys. 10, 532–533 (1991)). Proton implantations are also used in the 'smart cut' process to generate defects that can be used to cleave thin wafers (Romani and Evans, Nucl. Instrum. Methods Phys. Res. B 44, 313–317 (1990)). However, the implantation damage resulting from H+implantations is not completely understood. In this study, protons with energies from 400 keV up to 4 MeV and doses up to 1016 H+/cm² were implanted into highly ohmic boron doped m:Cz silicon (100). Electron Beam Induced Current (EBIC) measurements were performed to locally determine the minority charge carrier diffusion length. The diffusion length decreases with increasing implantation dose and incorporated damage. Spreading Resistance Profiling (SRP) measurements were performed to analyze the charge carrier concentration profiles for different annealing procedures. The electrical activation and growth of the defect complexes varies strongly with the annealing parameters. Transmission Electron Microscopy measurements were made to investigate the microscopic structures formed by the high dose implantation processes. Due to the high local damage density resulting from low energy and high dose H+ implants, platelet structures are formed. During high‐energy high‐dose H+implantations, the implanted hydrogen generates strain in the crystal lattice resulting in changes in the distances between atomic planes. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Section: Introduction Because Protons (H +mentioning

confidence: 99%

High dose proton implantations into silicon: a combined EBIC, SRP and TEM study

Kirnstoetter

Faccinelli

Gspan

et al. 2014

Phys. Status Solidi C

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“…15 ͑2͒ In addition, a second series of thermally produced defects have also been observed in a similar, but distinct C 2v EPR spectrum labeled NL10. 13,16 This series tends to grow in at later annealing times than NL8, but in some conditions can grow in quite quickly and rapidly exceed the NL8 concentrations. For it, ENDOR studies suggest a very similar core to NL8 with almost identical bonded oxygen spectra, but, in addition, either a single hydrogen or aluminum atom seems to also be present.…”

Section: Introductionmentioning

confidence: 99%

“…12 These double donors also give rise in their TDD ϩ singly ionized states to a C 2v electron paramagnetic resonance ͑EPR͒ signal, labeled NL8, whose g values shift slightly vs annealing time reflecting the unresolved contributions of the different donors and their progression vs time to the later species. 13 The identity of the NL8 spectrum with the TDD ϩ s has been established by correlative changes ob-served in the NL8 spectrum under uniaxial stress. 14 Electronnuclear double resonance ͑ENDOR͒ studies have confirmed the presence of bonded oxygen atoms near or in the core, but detect no other impurity and conclude also that there are no unique core oxygen atoms on the C 2v axis.…”

Section: Introductionmentioning

confidence: 99%

Stress-induced alignment of NL8 thermal donors in silicon: Energetics and kinetics

Trombetta

Watkins

Hage³

et al. 1997

Journal of Applied Physics

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Preferential alignment is produced for the NL8 thermal double donors ͑TDDs͒ when uniaxial stress is applied during their formation at ϳ450°C. The recovery kinetics reveal that they can reorient readily on the time scale of their lifetime and their individual alignments therefore reflect the strain fields that each introduces into the lattice. Analysis reveals that each of the donor cores produces large compressional strain along its C 2v ͓001͔Ј axis, the magnitude of which decreases monotonically with increase in the TDD species series, suggesting strain relief as the mechanism for nearby oxygen accumulation. The rate and activation energy for the reorientation suggests that the process is limited by the diffusion motion of the nearby interstitial oxygen atoms, with ϳ5 jumps being required for TDD3, the third in the series, and progressively more for the subsequent ones.

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“…Following the identification of EPR spectra related to thermal donors in silicon [5,6] and germanium [7] a vast amount of detailed information on stucture and symmetry of these centers was obtained as the EPR studies could further be augmented by the more advanced ENDOR techniques [8][9][10]. This was especially welcomed in view of the importance of the thermal donor issue in submicron technology of silicon.…”

Section: Introductionmentioning

confidence: 99%

Photo-EPR Investigations of Thermal Donors in Silicon

et al. 1991

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Two thermal donor related EPR centers Si-NL8 and Si-NL10 were studied by the photo-EPR technique. The spectral dependence of the intensity of the EPR signals was determined for the region from 0.6 to 1.4 eV in several samples with different Fermi 1evel position. The quenching of the Si-NL8 signal with the coinciding enhancement of the Si-NL10 signal has been observed with possible indication of some metastable behavior of the NL8 center. For the heavily aluminum doped material strong generation of photocurrent upon band gap illumination has been observed. The results of the study provide further evidence for mutal correlation of both thermal donor related EPR centers since the observed spectral dependences could be understood by relating both NL8 and NL10 spectra to different paramagnetic states of basically the same center.

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EPR spectra of heat-treatment centers in oxygen-rich silicon

Cited by 146 publications

References 9 publications

High dose proton implantations into silicon: a combined EBIC, SRP and TEM study

High dose proton implantations into silicon: a combined EBIC, SRP and TEM study

Stress-induced alignment of NL8 thermal donors in silicon: Energetics and kinetics

Photo-EPR Investigations of Thermal Donors in Silicon

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