Luminescence from<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>β</mml:mi><mml:mo>−</mml:mo><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">FeSi</mml:mi></mml:mrow><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>precipitates in Si. I. Morphology and epitaxial relationship

Grimaldi, M. G.; Bongiorno, Corrado; Spinella, C.; Grilli, E.; Martinelli, Lucio; Gemelli, M; Мигас, Д. Б.; Miglio, Leo; Fanciulli, M.

doi:10.1103/physrevb.66.085319

Cited by 40 publications

(22 citation statements)

References 36 publications

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“…In recent papers, we analyzed in detail the structural properties of IBS-synthesized crystalline ␤-FeSi 2 precipitates in silicon, both experimentally and theoretically, 14,15 spanning a wide range of preparation parameters. We found the process providing the most promising characteristics of the ␤-FeSi 2 precipitates, and we investigated extensively the optical and electronic properties of such precipitates.…”

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confidence: 99%

“…The IBS carried out on heated substrates with a small dose of implanted iron strongly limits the defect density in the silicon matrix, 15 making it possible to observe light emission up to RT.…”

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confidence: 99%

“…The subsequent IBS process ͑240 keV, 2ϫ10 15 Fe ϩ cm Ϫ2 implanted at 300°C followed by annealing at 800°C for 20 h͒ produces the light-emitting precipitates in a region from 200 to 400 nm from the surface, 15 thus in the depletion region of the junction. The electrical contact on n ϩ side was obtained by evaporating Ti contacts ͑about 1 mm in diameter͒, while for the p side, an In-Ga eutectic solution has been used.…”

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confidence: 99%

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Room-temperature electroluminescence of ion-beam-synthesized β-FeSi2 precipitates in silicon

Martinelli

Grilli

Guzzi

et al. 2003

Applied Physics Letters

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A simple silicon-based electroluminescent device has been realized, embedding β-FeSi2 precipitates in the depletion region of a Si p–n junction by ion-beam synthesis, a process fully compatible with microelectronics technologies. Light emission peaked at about 1.6 μm has been observed up to room temperature. The luminescence signal is shown to be due to interband recombination in the crystalline nanoprecipitates.

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Room-temperature electroluminescence of ion-beam-synthesized β-FeSi2 precipitates in silicon

Martinelli

Grilli

Guzzi

et al. 2003

Applied Physics Letters

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“…4(b) is a selected area diffraction (SAD) pattern taken from one b-FeSi 2 particle along the which are also reported by other researchers [8,16,17]. Considering the lattice mismatch between the b-FeSi 2 and Si, there should be some strain in these b-FeSi 2 particles, which is expected to be $9% tensile strain in the b-FeSi 2 [1 0 0] direction [18,19]. After additional 10 h at 850 1C no obvious change is observed in the morphology of b-FeSi 2 nanoparticles.…”

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confidence: 96%

Correlation between impurities in Fe–Si amorphous layers synthesized by Fe implantation and photoluminescence property of β-FeSi2 precipitates in Si

Sun

Tsang

Wong

et al. 2008

Journal of Luminescence

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“…8,9 From this point of view, the study of the formation of isolated nanoparticles will be of interest to explore that prediction and additionally to complement low-dimensional structure knowledge for optoelectronic applications. Previous experiments by Grimaldi et al 10 and Martinelli et al 11 showed that elastically strained ball-shaped particles ͑formed by ion-beam synthesis͒ surrounded by a defect-free matrix do not have luminescence properties, whereas unstrained disk-shaped particles in a matrix with a large number of defects emit around 0.805 eV. Absorbance measurements of the latter have suggested the existence of a direct band gap.…”

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confidence: 99%

Indirect optical absorption and origin of the emission from β-FeSi2 nanoparticles: Bound exciton (0.809 eV) and band to acceptor impurity (0.795 eV) transitions

Lang

Amaral

Menêses

2010

Journal of Applied Physics

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We investigated the optical absorption of the fundamental band edge and the origin of the emission from β-FeSi2 nanoparticles synthesized by ion-beam-induced epitaxial crystallization of Fe+ implanted SiO2/Si(100) followed by thermal annealing. From micro-Raman scattering and transmission electron microscopy measurements it was possible to attest the formation of strained β-FeSi2 nanoparticles and its structural quality. The optical absorption near the fundamental gap edge of β-FeSi2 nanoparticles evaluated by spectroscopic ellipsometry showed a step structure characteristic of an indirect fundamental gap material. Photoluminescence spectroscopy measurements at each synthesis stage revealed complex emissions in the 0.7–0.9 eV spectral region, with different intensities and morphologies strongly dependent on thermal treatment temperature. Spectral deconvolution into four transition lines at 0.795, 0.809, 0.851, and 0.873 eV was performed. We concluded that the emission at 0.795 eV may be related to a radiative direct transition from the direct conduction band to an acceptor level and that the emission at 0.809 eV derives from a recombination of an indirect bound exciton to this acceptor level of β-FeSi2. Emissions 0.851 and 0.873 eV were confirmed to be typical dislocation-related photoluminescence centers in Si. From the energy balance we determined the fundamental indirect and direct band gap energies to be 0.856 and 0.867 eV, respectively. An illustrative energy band diagram derived from a proposed model to explain the possible transition processes involved is presented.

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Luminescence fromβ−FeSi2precipitates in Si. I. Morphology and epitaxial relationship

Cited by 40 publications

References 36 publications

Room-temperature electroluminescence of ion-beam-synthesized β-FeSi2 precipitates in silicon

Room-temperature electroluminescence of ion-beam-synthesized β-FeSi2 precipitates in silicon

Correlation between impurities in Fe–Si amorphous layers synthesized by Fe implantation and photoluminescence property of β-FeSi2 precipitates in Si

Indirect optical absorption and origin of the emission from β-FeSi2 nanoparticles: Bound exciton (0.809 eV) and band to acceptor impurity (0.795 eV) transitions

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