Room-temperature electroluminescence of ion-beam-synthesized β-FeSi2 precipitates in silicon

Abstract

A simple silicon-based electroluminescent device has been realized, embedding β-FeSi2 precipitates in the depletion region of a Si p–n junction by ion-beam synthesis, a process fully compatible with microelectronics technologies. Light emission peaked at about 1.6 μm has been observed up to room temperature. The luminescence signal is shown to be due to interband recombination in the crystalline nanoprecipitates.

Luminescence of ZnS:Cu,Cl Phosphor Powder Excited by Photons, an Electric Field and Cathode Rays

“…3 from exciting the powder surface by 5keV electrons. This spatial recombination center distribution inducing different spectral energy distribution was also observed in β-FeSi 2 luminescent devices [21]. , 19 (22) 1-6 (2009) Figure 3.…”

Improvement of luminescence from β-FeSi2 particles embedded in silicon, with high temperature silicon buffer layer

“…The activation energy of thermal quenching for the samples with silicon buffer layer was fitted at about 230 meV, which is in good agreement with the band gap energy shift between silicon and b-FeSi 2 as reported in Refs. [5,10]. While, the activation energy for the sample without silicon buffer layer is much smaller, about 64 meV.…”

“…Electroluminescence (EL) of b-FeSi 2 acting as active region in a silicon p-n junction grown by ion-beam synthesis and reactive deposition epitaxy has been reported from low temperature to room temperature since 1997 [3][4][5]. The optical properties and electrical characteristics of b-FeSi 2 grown by various methods have been investigated in many groups [6][7][8].…”

Temperature dependence of electroluminescence from Si-based light emitting diodes with β-FeSi2 particles active region

“…b-FeSi 2 has been grown by various methods, such as reactive deposition epitaxy (RDE) [4], ion-beam synthesis (IBS) [5,6], magnetron-sputtering deposition [7], gas source molecular beam epitaxy [8], etc., but only in a few cases, room temperature electroluminescence (EL) was observed for small b-FeSi 2 particles embedded in silicon matrix grown by IBS and RDE [9][10][11], respectively. More recently, Martinelli et.…”