Correlation between impurities in Fe–Si amorphous layers synthesized by Fe implantation and photoluminescence property of β-FeSi2 precipitates in Si

Sun, Chang; Tsang, Hon Ki; Wong, S.P.; Ke, N.; Hark, S. K.

doi:10.1016/j.jlumin.2008.05.007

Cited by 4 publications

(2 citation statements)

References 20 publications

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“…Although the application of β-FeSi 2 NDs to lightemitting diodes has been recently studied, the formation of β-FeSi 2 NDs needs long-time annealing at a temperature as high as 800 °C-900 °C. [20][21][22] However, one major issue with regard to the formation of β-FeSi 2 NDs is the minimization of metal diffusion into a dielectric layer, which often degrades oxide reliability. In addition, from the viewpoint of device application of β-FeSi 2 NDs to Si-based light emitters, the formation of β-FeSi 2 NDs over 10 11 cm −2 still requires further research.…”

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confidence: 99%

Study on silicidation reaction of Fe nanodots with SiH₄

Furuhata

Makihara

Shimura

et al. 2022

Appl. Phys. Express

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We have demonstrated formation of Fe–silicide nanodots (NDs) on SiO2 by exposing Fe NDs to SiH4. The Fe NDs were formed by exposing ultrathin Fe film deposited on SiO2 to remote H2–plasma. After SiH4 exposure at 400°C, formation of Fe–silicide NDs with an areal dot density over 1011 cm−2 was confirmed. Photoluminescence from the Fe–silicide NDs was observable at room temperature in the near-infrared, being attributed to radiative recombination between quantized states in the NDs. The results will lead to the development of Si-based light-emitting devices that are highly compatible with Si ultralarge-scale-integration processing.

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confidence: 99%

Study on silicidation reaction of Fe nanodots with SiH₄

Furuhata

Makihara

Shimura

et al. 2022

Appl. Phys. Express

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“…Considering the quantum confinement effect, semiconducting β-FeSi 2 nanostructures are promising to improve the light emission efficiency and RT operation. 18,20,21) Recently, we have demonstrated the formation of Fe silicide NDs with an areal density as high as ∼10 11 cm -2 on SiO 2 by remote H 2 plasma (H 2 RP) induced self-assembly of Fe NDs [22][23][24][25][26] and subsequent SiH 4 exposure at 400 °C. From RT photoluminescence (PL) measurements, we have also found that the NDs after SiH 4 exposure at 400 °C show stable PL signals in the energy range from ∼0.7 to ∼0.85 eV associated with β-FeSi 2 ND formation.…”

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confidence: 99%

Formation of β-FeSi₂ nanodots by SiH₄ exposure to Fe nanodots

Saito,

Makihara,

Taoka

et al. 2024

Jpn. J. Appl. Phys.

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We have demonstrated formation of β-FeSi2 nanodots (NDs) with an areal density as high as ~1011 cm-2 on SiO2 by exposing Fe–NDs to SiH4 at 400oC and characterized their room–temperature light–emission properties. After the SiH4–exposure even at 1.0 Pa for 60 sec, stable photoluminescence (PL) signals, being characteristic of the semiconducting phase as β–FeSi2, were observed in the energy region from 0.7 to 0.85 eV. With an increase in the amount of SiH4 exposure from 60 to 600 Pa·sec, PL intensity increased by a factor of ~13. Note that, further increase in the amount of SiH4 over 600 Pa·sec, the PL intensity is weakened slightly. The observed decrease in the PL intensity is attributable to selective growth of Si onto the NDs after the formation of β–FeSi2 phase.

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