Strong room-temperature photoluminescence (PL) in the wavelength range 650–950 nm has been observed in high temperature annealed (1000–1300 °C) substoichiometric silicon oxide (SiOx) thin films prepared by plasma enhanced chemical vapor deposition. A marked redshift of the luminescence peak has been detected by increasing the Si concentration of the SiOx films, as well as the annealing temperature. The integrated intensity of the PL peaks spans along two orders of magnitude, and, as a general trend, increases with the annealing temperature up to 1250 °C. Transmission electron microscopy analyses have demonstrated that Si nanocrystals (nc), having a mean radius ranging between 0.7 and 2.1 nm, are present in the annealed samples. Each sample is characterized by a peculiar Si nc size distribution that can be fitted with a Gaussian curve; by increasing the Si content and/or the annealing temperature of the SiOx samples, the distributions become wider and their mean value increases. The strong correlation between structural (nanocrystal radius and width of the size distributions) and optical (wavelength and width of the PL peaks) data indicates that light emission from the annealed SiOx films is due to carrier recombination in the Si nc, and it can be interpreted in terms of carrier quantum confinement. The possible reasons for the quantitative discrepancy between the experimentally measured luminescence energy values and the theoretical calculations for the enlargement of the band gap with decreasing the crystal size are also discussed.

The solid phase crystallization of chemical vapor deposited amorphous silicon films onto oxidized silicon wafers, induced either by thermal annealing or by ion beam irradiation at high substrate temperatures, has been extensively developed and it is reviewed here. We report and discuss a large variety of processing conditions. The structural and thermodynamical properties of the starting phase are emphasized. The morphological evolution of the amorphous towards the polycrystalline phase is investigated by transmission electron microscopy and it is interpreted in terms of a physical model containing few free parameters related to the thermodynamical properties of amorphous silicon and to the kinetical mechanisms of crystal grain growth. A direct extension of this model explains also the data concerning the ion-assisted crystal grain nucleation.

Si nanoclusters embedded in SiO2 have been produced by thermal annealing of SiOx films prepared by plasma enhanced chemical vapor deposition. The structural properties of the system have been investigated by energy filtered transmission electron microscopy (EFTEM). EFTEM has evidenced the presence of a relevant contribution of amorphous nanostructures, not detectable by using the more conventional dark field transmission electron microscopy technique. By also taking into account this contribution, an accurate quantitative description of the evolution of the samples upon thermal annealing has been accomplished. In particular, the temperatures at which the nucleation of amorphous and crystalline Si nanoclusters starts have been determined. Furthermore, the nanocluster mean radius and density have been determined as a function of the annealing temperature. Finally, the optical and the structural properties of the system have been compared, to demonstrate that the photoluminescence properties of the system depend on both the amorphous and crystalline clusters.

We report the synthesis, the structural and optical characterization of CdSe/CdS/ZnS "double shell" nanorods and their exploitation in cell labeling experiments. To synthesize such nanorods, first "dot-in-a-rod" CdSe(dot)/CdS(rod) core/shell nanocrystals were prepared. Then a ZnS shell was grown epitaxially over these CdSe/CdS nanorods, which led to a fluorescence quantum yield of the final core-shell-shell nanorods that could be as high as 75%. The quantum efficiency was correlated with the aspect ratio of the nanorods and with the thickness of the ZnS shell around the starting CdSe/CdS rods, which varied from 1 to 4 monolayers (as supported by a combination of X-ray diffraction, elemental analysis with inductively coupled plasma atomic emission spectroscopy and high resolution transmission electron microscopy analysis). Pump-probe and time-resolved photoluminescence measurements confirmed the reduction of trapping at CdS surface due to the presence of the ZnS shell, which resulted in more efficient photoluminescence. These double shell nanorods have potential applications as fluorescent biological labels, as we found that they are brighter in cell imaging as compared to the starting CdSe/CdS nanorods and to the CdSe/ZnS quantum dots, therefore a lower amount of material is required to label the cells. Concerning their cytotoxicity, according to the MTT assay, the double shell nanorods were less toxic than the starting core/shell nanorods and than the CdSe/ZnS quantum dots, although the latter still exhibited a lower intracellular toxicity than both nanorod samples.