Low‐power 77–81 GHz CMOS LNA with excellent matching for automotive radars

Lin, Yo‐Sheng; Lee, G.-L.; Wang, C.-C.

doi:10.1049/el.2013.2631

Cited by 11 publications

(8 citation statements)

References 4 publications

(14 reference statements)

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“…Meanwhile, the amplifier has a measured OP1dB of −8.2 dBm at 79 GHz. Performance comparison with other amplifier designs [2,10,11,32] is summarized in Table I. This work achieves a relatively high gain with relatively low power dissipation.…”

Section: Resultsmentioning

confidence: 99%

“…Over the past years, the CMOS millimeter-wave circuit research has attracted enormous attention [1,2,3,4,5,6,7,8,9,10,11] as the CMOS technology node scales. Among components of a wireless system, the low noise amplifier (LNA) is a particularly crucial one since it is required to offer a high gain to reduce the noise contribution of subsequent circuits [9,12,13,14], thus elevating the system sensitivity.…”

Section: Introductionmentioning

confidence: 99%

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A high gain 79-GHz low noise amplifier using inductor-embedded neutralization technique

Cheng

Mei

et al. 2021

IEICE Electron. Express

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This paper presents a 79 GHz low noise amplifier (LNA) design featuring high gain fabricated in a 40-nm CMOS process. To make better use of active devices, we propose an inductor-embedded neutralization technique. The implemented prototype consists of four-stage common-source amplifiers using the proposed technique and transformer-based matching networks. The measurement results show that the amplifier realizes a peak gain of 23 dB at 79 GHz with 14.4 mW power dissipation and 0.4 mm 2 area occupation. The LNA achieves a minimum noise figure (NF) of 6.3 dB.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

A high gain 79-GHz low noise amplifier using inductor-embedded neutralization technique

Cheng

Mei

et al. 2021

IEICE Electron. Express

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“…During the 1970s-1990s, engineers usually tried to fabricate integrated wideband amplifiers by utilising the BJT, MESFET, BiFET, HEMT, MOS, CMOS and BiCMOS technologies. In the 2000s, they chiefly focussed on the CMOS, BiCMOS and HEMT processes to design integrated wideband and ultrawideband LNAs, and also, they proposed different solutions such as shunt feedback technique to control gain, bandwidth and noise, common gate topology to realise wideband input [86,88,132,134,142,149,171,174,176,202,206,207,211,214,217,244,250,251,256,262,264,268,277,285,290,298,302,303,308,310,311,321,327,341,349,360] Gain � BW/P dc � (NF − 1) Or 20log 10 134,141,206,213,217,218,231,251,277,290,…”

Section: Discussionmentioning

confidence: 99%

“…In the 2010s, MOSFET scaling reached 5 nm from 32 nm [30] and many studies [161–200, 201–250, 251–300, 301–361] were carried out by focussing on improving the mentioned topologies and techniques which were presented in the 2000s for wideband LNA. As examples, we can refer to ‘the noise/distortion cancelation topologies’ [164, 167, 173, 181, 189, 192, 194, 195, 201, …”

Section: Uwb Lnamentioning

confidence: 99%

Ultrawideband LNA 1960–2019: Review

Shahrabadi

2021

IET Circuits, Devices & Syst

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To the best of the author's knowledge, several studies during 1960-2019 were carried out on wideband and ultrawideband LNAs just to render optimum LNAs for SAW-less Radio-Frequency Integrated Circuits (RFICs) but none of these works reviewed and taught the proceedings of these six decades, hence the lack of a comprehensive review is quite noticeable. This article specifically studies the challenges and solutions of designing UWB LNA by reviewing topologies and techniques such as inductive peaking, noise and distortion cancellation, g m -boosting, active inductor and notch filter. Its historical aspect illustrates when the idea of wideband LNA was born and how it changed to ultrawideband LNA, and its tutorial aspect discusses circuits and achievements to present optimum LNAs in Complementary MOS (CMOS), BiCMOS and High-Electron-Mobility Transistor (HEMT) technologies. This work describes the endeavours of engineers in reaching UWB LNA from narrowband LNA during six decades that have great importance as a chapter in understanding this topic because it teaches all topologies, techniques, circuits and related events in a historical narrative for trained readers who are not experts on this topic. | UWB LNA | In the 1960sWhere did the idea of 'transistorised wideband LNA' originate from? It seems that everything goes back to the 1960s when This is an open access article under the terms of the Creative Commons Attribution License, which permits use, distribution and reproduction in any medium, provided the original work is properly cited.

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“…The main function of LNA is to amplify the signal with acceptable NF. An ideal LNA has higher gain, 1 dB compression point (P1dB), IIP3 and bandwidth, and it has lower NF, area and power consumption . Specifications of the LNA design for mobile communication are approximated as quoted in Table…”

Section: Introductionmentioning

confidence: 99%

Survey on parameter optimization of mobile communication band low noise amplifier design

Roobert¹,

Rani²

2019

Int J RF Microw Comput Aided Eng

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A comparative study on recent works on low noise amplifiers (LNAs) designed to be operated at mobile communication band is performed in this article. Here, specifications of different generations of mobile communication are listed, which are considered to classify recent works on LNAs. Even though gain and noise figure (NF) are the primary parameters of LNA; other parameters like power, linearity, bandwidth, and area also get importance. Due to this, optimization techniques handpicked for all those parameters are discussed. The inverse relation between gain and NF is exploited to achieve low noise and high gain together. While increasing the gain, power consumption is increased by drain current. Each LNA is found as good in terms of gain and other parameters to satisfy the requirements. The figure of merit is opted to find the performance of each LNA, and the comparison is performed. The best parameters reported in the comparison are 31.53 dB of gain, 0.7 dB of NF, 0.03 mw of power consumption, 18.14 dBm of third-order input intercept point (IIP3), 24 GHz bandwidth and 0.0052 mm 2 of area at different frequencies and technology nodes. In this survey, as per the optimized FoM for mobile communication, crosscoupled common gate differential LNA, which was designed to be operated at 0.3 to 2.96 GHz gives better results among CMOS LNAs.

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Low‐power 77–81 GHz CMOS LNA with excellent matching for automotive radars

Cited by 11 publications

References 4 publications

A high gain 79-GHz low noise amplifier using inductor-embedded neutralization technique

A high gain 79-GHz low noise amplifier using inductor-embedded neutralization technique

Ultrawideband LNA 1960–2019: Review

Survey on parameter optimization of mobile communication band low noise amplifier design

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