HIGHLIGHTSOur cost model shows competitive perovskite PV requires high-throughput processingWe replace conventional annealing with rapid thermal processing without PCE lossThe combination of RTA and blade coating establishes a scalable processing routeIn situ XRD reveals a perovskite conversion mechanism and role of intermediates Bruening et al., Joule
SUMMARYCost modeling shows that high-throughput processing of perovskite solar cells is required not only to compete with incumbent technologies in terms of levelized cost of energy, but more importantly, it is the major enabling factor facilitating sustainable growth rates of solar cell manufacturing capacity commensurate with global climate targets. We performed rapid thermal annealing at bladecoating speed to quickly deposit and convert perovskite thin films for scalable manufacturing of perovskite solar cells. In situ X-ray diffraction during film deposition and thermal conversion gave insight into the formation of crystalline intermediates, essential for high-quality films. Parameters were optimized based on the in situ study, allowing perovskite films to be annealed within 3 s with a champion power conversion efficiency of 16.8%. This opens up a clear pathway toward industrial-scale high-throughput manufacturing, which is required to fulfill the projected photovoltaic installation rates needed to reach climate goals.
In this paper, we demonstrate an SiGe HBT ultra-wideband (UWB) low-noise amplifier (LNA), achieved by a newly proposed methodology, which takes advantage of the Miller effect for UWB input impedance matching and the inductive shunt-shunt feedback technique for bandwidth extension by pole-zero cancellation. The SiGe UWB LNA dissipates 25.8-mW power and achieves 11 below 10 dB for frequencies from 3 to 14 GHz (except for a small range from 10 to 11 GHz, which is below 9 dB), flat 21 of 24.6 1.5 dB for frequencies from 3 to 11.6 GHz, noise figure of 2.5 and 5.8 dB at 3 and 10 GHz, respectively, and good phase linearity property (group-delay variation is only 28 ps across the entire band). The measured 1-dB compression point ( 1 dB ) and input third-order intermodulation point are 25.5 and 17 dBm, respectively, at 5.4 GHz.
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