Low-Energy X-ray and Ozone-Exposure Induced Defect Formation in Graphene Materials and Devices

Zhang, En Xia; Newaz, A. K. M.; Wang, Bin; Bhandaru, S.; Zhang, C. X.; Fleetwood, D.M.; Bolotin, Kirill I.; Pantelides, Sokrates T.; Alles, Michael L.; Schrimpf, R.D.; Weiss, Sharon M.; Reed, Robert A.; Weller, Robert A.

doi:10.1109/tns.2011.2167519

Cited by 58 publications

(28 citation statements)

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“…As described in [4], there have been a few studies of ionizing radiation effects on graphene and on graphene-based materials. Initial investigations of total ionizing dose (TID) effects on graphene-based devices were done using back-gated GFETs and performed under different conditions (e.g., irradiated and characterized under vacuum or in air) resulting in a different radiation response [4][5][6].…”

Section: Introductionmentioning

confidence: 99%

“…Initial investigations of total ionizing dose (TID) effects on graphene-based devices were done using back-gated GFETs and performed under different conditions (e.g., irradiated and characterized under vacuum or in air) resulting in a different radiation response [4][5][6]. In a typical back-gated GFET test structure the graphene layer is exposed causing the radiation response to be strongly dependent on the experimental ambient condition.…”

Section: Introductionmentioning

confidence: 99%

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Modeling Radiation-Induced Degradation in Top-Gated Epitaxial Graphene Field-Effect-Transistors (FETs)

et al. 2013

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This paper investigates total ionizing dose (TID) effects in top-gated epitaxial graphene field-effect-transistors (GFETs). Measurements reveal voltage shifts in the current-voltage (I-V) characteristics and degradation of carrier mobility and minimum conductivity, consistent with the buildup of oxide-trapped charges. A semi-empirical approach for modeling radiation-induced degradation in GFETs effective carrier mobility is described in the paper. The modeling approach describes Coulomb and short-range scattering based on calculations of charge and effective vertical field that incorporate radiation-induced oxide trapped charges. The transition from the dominant scattering mechanism is correctly described as a function of effective field and oxide trapped charge density. Comparison with experimental data results in good qualitative agreement when including an empirical component to account for scatterer transparency in the low field regime.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Modeling Radiation-Induced Degradation in Top-Gated Epitaxial Graphene Field-Effect-Transistors (FETs)

et al. 2013

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“…The other important feature of 1T -TaS 2 is the very high carrier concentration in both NC-CDW and IC-CDW states, on the order of 10 21 cm −3 and 10 22 cm −3 , respectively [11], [12]. These values are much higher than those in conventional semiconductor devices; they are closer to those of metals and/or graphene away from the Dirac point [13], [17].…”

Section: Discussionmentioning

confidence: 95%

“…3(b) is due primarily to a change in DC offset during pre-and postirradiation oscillation measurements, rather than a change in device performance. We also examined Raman spectra of the device channel before and after irradiation to see whether changes in material properties may have occurred, as can happen in graphene as a result of X-ray induced reactions with oxygen, for example [13]. In Fig.…”

Section: Resultsmentioning

confidence: 99%

Total-Ionizing-Dose Effects on Threshold Switching in $1{T}$ -TaS2 Charge Density Wave Devices

Liu

Zhang

Liang

et al. 2017

IEEE Electron Device Lett.

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-The 1T polytype of TaS 2 exhibits voltagetriggered threshold switching as a result of a phase transition from nearly commensurate to incommensurate charge density wave states. Threshold switching, persistent above room temperature, can be utilized in a variety of electronic devices, e.g., voltage controlled oscillators. We evaluated the total-ionizing-dose response of thin film 1T -TaS 2 at doses up to 1 Mrad (SiO 2 ). The threshold voltage changed by less than 2% after irradiation, with persistent self-sustained oscillations observed through the full irradiation sequence. The radiation hardness is attributed to the high intrinsic carrier concentration of 1T -TaS 2 in both of the phases that lead to threshold switching. These results suggest that charge density wave devices, implemented with thin films of 1T -TaS 2 , are promising for applications in high radiation environments.

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“…Mechanically exfoliated graphene ambipolar devices with 300-nm SiO 2 dielectrics exhibited increasing positive V th with increasing dose when irradiated in air with 10 keV X-rays at V g = −5 V up to 300 kRad(SiO 2 ) [74]. However, a dose greater than 1 MRad(SiO 2 ) is required to induce V th in suspended graphene sheet devices where the SiO 2 film has been removed.…”

Section: Thin Film 2-d Material and Nanotube Transistorsmentioning

confidence: 99%

Total Ionizing Dose Hardened and Mitigation Strategies in Deep Submicrometer CMOS and Beyond

Chatzikyriakou

Morgan

Groot

2018

IEEE Trans. Electron Devices

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-From man-made satellites and interplanetary missions to fusion power plants, electronic equipment that needs to withstand various forms of irradiation is an essential part of their operation. Examination of total ionizing dose (TID) effects in electronic equipment can provide a thorough means to predict their reliability in conditions where ionizing dose becomes a serious hazard. In this paper, we provide a historical overview of logic and memory technologies that made the biggest impact both in terms of their competitive characteristics and their intrinsically hardened nature against TID. Further to this, we also provide guidelines for hardened device designs and present the cases where hardened alternatives have been implemented and tested in the lab. The technologies that we examine range from silicon-on-insulator and FinFET to 2-D semiconductor transistors and resistive random access memory.Index Terms-2-D semiconductor, carbon, CMOS, deep submicrometer, FinFET, graphene, MoS2, resistive random access memory (RRAM), silicon-on-insulator (SOI), thin film, total ionizing dose (TID), ultrathin buried oxide (UTBOX).

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Low-Energy X-ray and Ozone-Exposure Induced Defect Formation in Graphene Materials and Devices

Cited by 58 publications

References 50 publications

Modeling Radiation-Induced Degradation in Top-Gated Epitaxial Graphene Field-Effect-Transistors (FETs)

Modeling Radiation-Induced Degradation in Top-Gated Epitaxial Graphene Field-Effect-Transistors (FETs)

Total-Ionizing-Dose Effects on Threshold Switching in $1{T}$ -TaS2 Charge Density Wave Devices

Total Ionizing Dose Hardened and Mitigation Strategies in Deep Submicrometer CMOS and Beyond

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