Low cost high voltage GaN polarization superjunction field effect transistors

Kawai, H.; Yagi, Shuichi; Hirata, Seishiro; Nakamura, Fumihiko; Saito, Tomoya; Kamiyama, Yusuke; Yamamoto, Masaaki; Amano, Hiroshi; Unni, Vineet; Narayanan, E.M. Sankara

doi:10.1002/pssa.201600834

Cited by 41 publications

(38 citation statements)

References 34 publications

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“…To measure 2DHG according to Ref. [17], Hall measurement samples were fabricated with Ni/Au ohmic contacts. The density and mobility of the 2DHG were 9 × 10 12 cm −2 and 15 cm 2 /V s, respectively.…”

Section: Methods and Experimentsmentioning

confidence: 99%

“…In addition, the conventional REduced SURface Field (RESURF) concept commonly employed in silicon technology has been demonstrated in GaN HEMT [14]. Moreover, the polarization junction (PJ) consisting of the two-dimensional hole gas (2DHG) above the 2DEG is proposed to improve the relationship between specific on-resistance (R ON,SP ) and BV [15][16][17][18]. GaN-based devices based on the PJ concept have been demonstrated on Sapphire and SiC substrate, while the high cost and small diameters of the GaN on SiC substrates go against the mass commercial application.…”

Section: Introductionmentioning

confidence: 99%

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Theoretical and Experimental Study on AlGaN/GaN Schottky Barrier Diode on Si Substrate with Double-Heterojunction

et al. 2020

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An AlGaN/GaN Schottky barrier diode (SBD) with double-heterojunction is theoretically and experimentally investigated on the GaN/AlGaN/GaN/Si-sub. The two-dimensional hole gas (2DHG) and electron gas (2DEG) are formed at the GaNtop/AlGaN and AlGaN/GaN interface, respectively. At the off-state, the 2DEH and 2DHG are partially depleted and then completely disappear. There remain the fixed positive and negative polarization charges, forming the polarization junction. Therefore, a flat electric field in the drift region and a high breakdown voltage (BV) are obtained. Moreover, the anode is recessed to reduce turn-on voltage (V ON). The low-damage ICP etching process results in the improved Schottky contacts, and a low leakgae current and a low V ON is obtained. The fabricated SBD exhibits a BV of 1109 V with anode-to-cathode distance (L AC) of 11 μm. The fabricated SBDs achieve a low V ON of 0.68 V with good uniformity, a high on/off current ratio ∼ 10 10 at room temperature, a low specific on-resistance (R ON,SP) of 1.17 mΩ cm 2 , and a high Baliga's figure-of-merit (FOM) of 1051 MW/cm 2 .

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Section: Methods and Experimentsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Theoretical and Experimental Study on AlGaN/GaN Schottky Barrier Diode on Si Substrate with Double-Heterojunction

et al. 2020

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“…These devices have better performance outcomes even under the extreme operating conditions. 47 The PSJ-FET is grown on the sapphire with less complexity and runs numerous times without any interruption as compared to the GaN epitaxial layers on the Si substrates. Figure 5D shows the schematic structure of the PSJ-FET under blocking state.…”

Section: Gan Jfetsmentioning

confidence: 99%

“…Schematic diagrams of GaN-based (A) Normally-off VC-VJFET, 43 (B) Fin unit cell, 45 (C) Quasi-vertical VC-VJFET, 46 (D) PSJ-FET 47 [Colour figure can be viewed at wileyonlinelibrary.com] fast de-trapping rate and lower dynamic resistance due to the presence of the pdrain. The field plates can further reduce the dynamic on-state resistance of the device.…”

Section: Gan Gitmentioning

confidence: 99%

Advancements in energy efficientGaNpower devices and power modules for electric vehicle applications: a review

Yadlapalli

Anuradha²,

Kandipati³

et al. 2021

Int J Energy Res

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The third generation wide bandgap (WBG) semiconductor materials exhibit a prominent role in various applications such as adapters, uninterrupted power supplies, smart grids, and electric vehicles (EVs). They have the phenomenal properties such as high critical breakdown field, WBG, and high-saturated drift velocity as compared to the silicon (Si). This article throws a light on the classification and recent advancements of the GaN-based power devices along with their structural features. Moreover, it explores the critical issues that degrade the device performance and also various methods to improve their performance. The recently developed commercial GaN devices are enumerated with their figure of merits (FOMs) comparison with the Si and SiC devices. The outrageous features of GaN devices are well utilized for realizing the high power density and high efficiency power converters in case of EV applications. The updated survey of various GaN devices-based ac-dc, dc-dc, and dc-ac converters is presented along with their salient features. This article also emphasizes the approaches for resolving the power module issues such as parasitics, layout, and thermal design other than the power converters. This review is ultimately helpful for the design engineers to abridge the technical gaps arising due to the power electronics barriers.

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“…Simplified schematic depiction of a short-circuit operating condition (adapted from[9]) Micrograph and simplified cross-sectional schematic of(a) Conventional HFET, (b) PSJ HFET4 Numerical simulation results and analysisPhysics-based two-dimensional device simulations were performed using Silvaco ATLAS. The physical models included for simulation of the on-state characteristics were -POLAR (spontaneous polarisation), CALC.STRAIN (piezoelectric polarisation), SRH (Shockley-Read-Hall, carrier generationrecombination), and FLDMOB (field dependent mobility) to model electron mobility[14].…”

mentioning

confidence: 99%

Analysis of drain current saturation behaviour in GaN polarisation super junction HFETs

Unni

Long

Yan

et al. 2018

IET Power Electronics

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The magnitude of saturation current in a power device significantly impacts its short circuit capability. In conjunction with the unprecedented miniaturisation that GaN offers, there is a compelling rationale to examine this critical parameter in GaN transistors for thermally stable and reliable power converter applications. This article presents a comprehensive analysis of the physical behaviour that yields intrinsically low drain current saturation in GaN Polarisation Super Junction (PSJ) HFETs. The analysis in this work has been performed using electrical characterisation data of conventional and PSJ HFETs, supported by physics-based two-dimensional device simulations. Insight is gained on the differing device architecture-dependent mechanisms that determine the magnitude of drain current density in both types of devices when biased in the saturation region.

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Low cost high voltage GaN polarization superjunction field effect transistors

Cited by 41 publications

References 34 publications

Theoretical and Experimental Study on AlGaN/GaN Schottky Barrier Diode on Si Substrate with Double-Heterojunction

Theoretical and Experimental Study on AlGaN/GaN Schottky Barrier Diode on Si Substrate with Double-Heterojunction

Advancements in energy efficientGaNpower devices and power modules for electric vehicle applications: a review

Analysis of drain current saturation behaviour in GaN polarisation super junction HFETs

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