Advancements in energy efficientGaNpower devices and power modules for electric vehicle applications: a review

Abstract

The third generation wide bandgap (WBG) semiconductor materials exhibit a prominent role in various applications such as adapters, uninterrupted power supplies, smart grids, and electric vehicles (EVs). They have the phenomenal properties such as high critical breakdown field, WBG, and high-saturated drift velocity as compared to the silicon (Si). This article throws a light on the classification and recent advancements of the GaN-based power devices along with their structural features. Moreover, it explores the critical issues that degrade the device performance and also various methods to improve their performance. The recently developed commercial GaN devices are enumerated with their figure of merits (FOMs) comparison with the Si and SiC devices. The outrageous features of GaN devices are well utilized for realizing the high power density and high efficiency power converters in case of EV applications. The updated survey of various GaN devices-based ac-dc, dc-dc, and dc-ac converters is presented along with their salient features. This article also emphasizes the approaches for resolving the power module issues such as parasitics, layout, and thermal design other than the power converters. This review is ultimately helpful for the design engineers to abridge the technical gaps arising due to the power electronics barriers.

Review of Fast Charging for Electrified Transport: Demand, Technology, Systems, and Planning

“…Gallium-nitride (GaN) semiconductors are the most recent generation of WBG power switching devices; however, the breakdown voltage is typically limited to 600 V and power handling to less than 5 kW [99,100]. Whilst there has recently been some progress in improving the performance of GaN semiconductors (e.g., [101]), they are still held back for very high power applications (i.e., in DCFCs) due to their limited power capability, less proven reliability, and higher prices, relative to established alternatives. Reviews of recent developments in WBG semiconductors, including comparisons between GaN and silicon and silicon carbide devices, and their impact on the development of EV charging equipment may be found in [101,102].…”

Development of Molding Compounds Based on Epoxy Resin/Aromatic Amine/Benzoxazine for High‐Temperature Electronic Packaging Applications

“…In recent years, the rapid charging demand of new energy vehicles, mobile phones, tablet computers, and other consumer electronics, promotes the development of electronic power devices toward high power. [1,2] The third-generation wide-bandgap DOI: 10.1002/mame.202200351 (WBG) semiconductors, as typified by silicon carbide and gallium nitride, have gradually become core components in the fabrication of high-power devices. [3,4] The high-temperature operation is one of the most salient features of WBG semiconductors distinguished from silicon semiconductors.…”

Reconfigurable Radio‐Frequency High‐Electron Mobility Transistors via Ferroelectric‐Based Gallium Nitride Heterostructure

“…[ 5–8 ] Owing to its excellent material properties, gallium nitride (GaN) has shown excellent potential as a primary semiconductor candidate and is already commercialized for power, RF and integrated circuits (ICs). [ 9–14 ] With recent improvements in the epitaxial quality and structure, which even allows 2D hole gas (2DHG) to be formed, outstanding advancements have been made using GaN‐based materials in terms of device architectures and integration methods onto CMOS and other heterostructures. [ 15–18 ]…”

“…[5][6][7][8] Owing to its excellent material properties, gallium nitride (GaN) has shown excellent potential as a primary semiconductor candidate and is already commercialized for power, RF and integrated circuits (ICs). [9][10][11][12][13][14] With recent improvements in the epitaxial quality and structure, which even allows 2D hole gas (2DHG) to be formed, outstanding advancements have been made using GaN-based materials in terms of device architectures and integration methods onto CMOS and other heterostructures. [15][16][17][18] The capability of GaN-based highelectron mobility transistors (HEMTs) can be fully exploited and expanded by realizing reconfigurable electrical characteristics, ushering in a host of new and novel devices such as HEMT-based energyefficient logic, RF electronics, and even neuromorphic devices.…”