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A new ultralow gate–drain charge (Q GD) 4H-SiC trench MOSFET is presented and its mechanism is investigated by simulation. The novel MOSFET features double shielding structures (DS-MOS): one is the grounded split gate (SG), the other is the P+ shielding region (PSR). Both the SG and the PSR reduce the coupling effect between the gate and the drain, and transform the most part of the gate–drain capacitance (C GD) into the gate–source capacitance (C GS) and drain–source capacitance (C DS) in series. Thus the C GD is reduced and the proposed DS-MOS obtains ultralow Q GD. Compared with the double-trench MOSFET (DT-MOS) and the conventional trench MOSFET (CT-MOS), the proposed DS-MOS decreases the Q GD by 85% and 81%, respectively. Moreover, the figure of merit (FOM), defined as the product of specific on-resistance (R on, sp) and Q GD (R on, sp Q GD), is reduced by 84% and 81%, respectively.

In this study, we proposed and experimentally demonstrated a high breakdown voltage (BV) and low dynamic ON-resistance ( R ON, D ) AlGaN/GaN high electron mobility transistor (HEMT) by implanting fluorine ions in the thick SiN x passivation layer between the gate and drain electrodes. Instead of the fluorine ion implantation in the thin AlGaN barrier layer, the peak position and vacancy distributions are far from the two-dimensional electron gas (2DEG) channel in the case of fluorine ion implantation in the thick passivation layer, which effectively suppresses the direct current (DC) static and pulsed dynamic characteristic degradation. The fluorine ions in the passivation layer also extend the depletion region and increase the average electric field (E-field) strength between the gate and drain, leading to an enhanced BV. The BV of the proposed HEMT increases to 803 V from 680 V of the conventional AlGaN/GaN HEMT (Conv. HEMT) with the same dimensional parameters. The measured R ON, D of the proposed HEMT is only increased by 23% at a high drain quiescent bias of 100 V, while the R ON, D of the HEMT with fluorine ion implantation in the thin AlGaN barrier layer is increased by 98%.

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With increasing penetration of demand response and distributed renewable generation in the distribution system, distribution locational marginal price (DLMP) helps to provide a right price signal for participants in an active distribution system. Unlike the transmission system, the distribution system is unbalanced, which may result in different phase price at each bus. In this study, a three-phase current injection based optimal power flow (OPF) with robust convergence is proposed to compute DLMP at each bus and phase. Several scenarios have been modelled to validate the application of the proposed DLMP to manage distributed generation, demand response and line congestion for a modified IEEE test system.