A Snapback-Free and Low-Loss Shorted-Anode SOI LIGBT With Self-Adaptive Resistance

Snapback‐free and low‐loss SAG‐LIGBT with self‐driving auxiliary gate

“…Moreover, the P‐base is depleted by the gate voltage V A of the SAG, and the anode R SA is increased from R P‐base to R intrinsic as shown in Fig. 1 b , which is effective to suppress the snapback according to (4) in [12] and (1) in [13], thus the snapback is completely eliminated when the P‐base doping N P‐base increases from 3 × 10 15 to 9 × 10 15 cm −3 .…”

“…The shorted‐anode LIGBT (SA‐LIGBT) is proposed to improve the turn‐off characteristics by providing a low barrier electron channel [9–12]. However, the undesirable snapback effect occurs when the forward conduction changes from unipolar mode to the bipolar mode [13–15]. Many novel devices have been proposed to solve this issue.…”

A Snapback-Free and Low Turn-Off Loss 15 kV 4H–SiC IGBT with Multifunctional P-Floating Layer

“…Figure 2 shows the forward I – V curves of the MP-IGBT and the conventional FS-IGBT at the temperature of 300 K. It is obviously that the MP-IGBT shows no snapback phenomenon, but its forward conduction voltage drop at 100 A/cm 2 is larger than that of the conventional FS-IGBT with a 10 μm half collector length. This is due to the electron current of the MP-IGBT partially flowing into the N+ collector region during the forward conduction mode, so the conductivity modulation effect is weaker than that of the conventional FS-IGBT [ 16 , 17 ].…”

A Snapback-Free and Fast-Switching Shorted-Anode LIGBT With Multiple Current P-Plugs

“…Lateral Insulated Gate Bipolar Transistor (LIGBT) is a promising power device, which is widely applied in High Voltage ICs (HVIC) [1][2][3][4]. Here, the tradeoff relationship between forward voltage drop (Von) and turn-off loss (Eoff) limits the development of LIGBTs [5][6][7][8][9].…”