High Breakdown Voltage and Low Dynamic ON-Resistance AlGaN/GaN HEMT with Fluorine Ion Implantation in SiNx Passivation Layer

Yang, Chao; Luo, Xiaorong; Sun, Tao; Zhang, Anbang; Ouyang, Dongfa; Deng, Siyu; Wei, Jie; Zhang, Bo

doi:10.1186/s11671-019-3025-8

Cited by 29 publications

(14 citation statements)

References 32 publications

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“…These values are typical for the state-of-the-art AlGaN/GaN heterostructures [ 23 , 24 , 25 , 26 , 27 ]. Therefore, we can conclude that elimination of the buffer layer did not worsen the parameters of the 2DEG.…”

Section: Resultsmentioning

confidence: 95%

AlGaN/GaN on SiC Devices without a GaN Buffer Layer: Electrical and Noise Characteristics

et al. 2020

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We report on the high-voltage, noise, and radio frequency (RF) performances of aluminium gallium nitride/gallium nitride (AlGaN/GaN) on silicon carbide (SiC) devices without any GaN buffer. Such a GaN–SiC hybrid material was developed in order to improve thermal management and to reduce trapping effects. Fabricated Schottky barrier diodes (SBDs) demonstrated an ideality factor n at approximately 1.7 and breakdown voltages (fields) up to 780 V (approximately 0.8 MV/cm). Hall measurements revealed a thermally stable electron density at N2DEG = 1 × 1013 cm−2 of two-dimensional electron gas in the range of 77–300 K, with mobilities μ = 1.7 × 103 cm2/V∙s and μ = 1.0 × 104 cm2/V∙s at 300 K and 77 K, respectively. The maximum drain current and the transconductance were demonstrated to be as high as 0.5 A/mm and 150 mS/mm, respectively, for the transistors with gate length LG = 5 μm. Low-frequency noise measurements demonstrated an effective trap density below 1019 cm−3 eV−1. RF analysis revealed fT and fmax values up to 1.3 GHz and 6.7 GHz, respectively, demonstrating figures of merit fT × LG up to 6.7 GHz × µm. These data further confirm the high potential of a GaN–SiC hybrid material for the development of thin high electron mobility transistors (HEMTs) and SBDs with improved thermal stability for high-frequency and high-power applications.

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Section: Resultsmentioning

confidence: 95%

AlGaN/GaN on SiC Devices without a GaN Buffer Layer: Electrical and Noise Characteristics

et al. 2020

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“…Group III nitride-based high electron mobility transistors (HEMTs) have been identified as the most promising candidate for next-generation microwave power electronics owing to their fast-switching speed and lowswitching loss [1][2][3][4][5]. Lately, the most advanced nitride HEMTs have achieved initial commercialization up to 650 V. However, with the maturity of device fabrication technology, it has become increasingly difficult to further scaling up the breakdown voltages (V b ) and improving the device reliability at high temperatures.…”

Section: Introductionmentioning

confidence: 99%

High-Performance AlGaN Double Channel HEMTs with Improved Drain Current Density and High Breakdown Voltage

Zhang

Wang

et al. 2020

Nanoscale Res Lett

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In this work, AlGaN double channel heterostructure is proposed and grown by metal organic chemical vapor deposition (MOCVD), and high-performance AlGaN double channel high electron mobility transistors (HEMTs) are fabricated and investigated. The implementation of double channel feature effectively improves the transport properties of AlGaN channel heterostructures. On one hand, the total two dimensional electron gas (2DEG) density is promoted due to the double potential wells along the vertical direction and the enhanced carrier confinement. On the other hand, the average 2DEG density in each channel is reduced, and the mobility is elevated resulted from the suppression of carrier-carrier scattering effect. As a result, the maximum drain current density (I max) of AlGaN double channel HEMTs reaches 473 mA/mm with gate voltage of 0 V. Moreover, the superior breakdown performance of the AlGaN double channel HEMTs is also demonstrated. These results not only show the great application potential of AlGaN double channel HEMTs in microwave power electronics but also develop a new thinking for the studies of group III nitride-based electronic devices.

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“…154 Another approach includes the implantation of fluorine ions in the passivation layer for the enhancement of breakdown voltage along with the low dR on . 155 The other method is abided by the chemical vapor deposited (CVD) diamond. 156 The post-etch surface treatment is so useful for improvising the R on and electron transport property.…”

Section: Steady and Dynamic Performancementioning

confidence: 99%

Advancements in energy efficientGaNpower devices and power modules for electric vehicle applications: a review

Yadlapalli

Anuradha²,

Kandipati³

et al. 2021

Int J Energy Res

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The third generation wide bandgap (WBG) semiconductor materials exhibit a prominent role in various applications such as adapters, uninterrupted power supplies, smart grids, and electric vehicles (EVs). They have the phenomenal properties such as high critical breakdown field, WBG, and high-saturated drift velocity as compared to the silicon (Si). This article throws a light on the classification and recent advancements of the GaN-based power devices along with their structural features. Moreover, it explores the critical issues that degrade the device performance and also various methods to improve their performance. The recently developed commercial GaN devices are enumerated with their figure of merits (FOMs) comparison with the Si and SiC devices. The outrageous features of GaN devices are well utilized for realizing the high power density and high efficiency power converters in case of EV applications. The updated survey of various GaN devices-based ac-dc, dc-dc, and dc-ac converters is presented along with their salient features. This article also emphasizes the approaches for resolving the power module issues such as parasitics, layout, and thermal design other than the power converters. This review is ultimately helpful for the design engineers to abridge the technical gaps arising due to the power electronics barriers.

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High Breakdown Voltage and Low Dynamic ON-Resistance AlGaN/GaN HEMT with Fluorine Ion Implantation in SiNx Passivation Layer

Cited by 29 publications

References 32 publications

AlGaN/GaN on SiC Devices without a GaN Buffer Layer: Electrical and Noise Characteristics

AlGaN/GaN on SiC Devices without a GaN Buffer Layer: Electrical and Noise Characteristics

High-Performance AlGaN Double Channel HEMTs with Improved Drain Current Density and High Breakdown Voltage

Advancements in energy efficientGaNpower devices and power modules for electric vehicle applications: a review

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