Theoretical and Experimental Study on AlGaN/GaN Schottky Barrier Diode on Si Substrate with Double-Heterojunction

Sun, Tao; Luo, Xiaorong; Wei, Jie; Yang, Chao; Zhang, Bo

doi:10.1186/s11671-020-03376-z

Cited by 7 publications

(3 citation statements)

References 31 publications

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“…Meanwhile, compared with other works, the BV = 665 V and BFOM = 461 MW cm −2 in the PG-LFER still have room for improvement. The electric-field redistribution along the 2DEG channel is helpful to significantly improve the BV and BFOM values of the rectifier devices [12,30,31].…”

Section: Device Characteristics and Discussionmentioning

confidence: 99%

A low turn-on voltage AlGaN/GaN lateral field-effect rectifier compatible with p-GaN gate HEMT technology

Wang¹,

Chen²,

Wang³

et al. 2021

Semicond. Sci. Technol.

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In this paper, we designed a low turn-on voltage (V On) AlGaN/GaN lateral field-effect rectifier (LFER) compatible with p-GaN gate high-electron-mobility transistor (HEMT) technology (PG-LFER). We also established an analytical model on the gated control two-dimensional-electron-gas density (n S) distributions and V On to investigate the underlying mechanism. The designed PG-LFER features a p-GaN charge storage layer (CSL) under the anode terminal. Net negative charge density in the p-GaN CSL (σ p-GaN) is associated with the activated doping concentration of p-GaN CSL (N p-GaN) and p-GaN CSL thickness (t p-GaN). V On of the PG-LFER is significantly lowered due to the low σ p-GaN caused by reducing the N p-GaN and t p-GaN. Meanwhile, the low V On PG-LFER also preserves recognizable reverse blocking and capacitance characteristics. Verified by the calibrated simulation, the designed PG-LFER shows 70% lower V On compared with the non-optimized LFER with a high σ p-GaN. Compatible with p-GaN gate HEMT technology, the designed PG-LFER with improved performance is a promising candidate for power integrated applications.

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Section: Device Characteristics and Discussionmentioning

confidence: 99%

A low turn-on voltage AlGaN/GaN lateral field-effect rectifier compatible with p-GaN gate HEMT technology

Wang¹,

Chen²,

Wang³

et al. 2021

Semicond. Sci. Technol.

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“…High-Voltage Polarization-Superjunction GaN HEMT with Built-in SBD for Low Reverse Conduction Loss The devices were fabricated on a GaN/AlGaN/GaN double-heterojunction platform described in [13][14]28], which consists of the 55 nm GaN-top layer, 45 nm AlGaN, 0.7 nm AlN, 420 nm uid-GaN, buffer and Si substrate. The GaN-top layer is composed of 15 nm p++ GaN, 30 nm p-GaN and 10 nm uid-GaN.…”

Section: Introductionmentioning

confidence: 99%

High-Voltage Polarization-Superjunction GaN HEMT With Built-In SBD for Low Reverse Conduction Loss

Sun

Yang

Wei

et al. 2022

IEEE J. Electron Devices Soc.

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A GaN Reverse-Conducting HEMT (RC-HEMT) is proposed and fabricated on the GaN/AlGaN/GaN platform. It features an integrated Schottky barrier diode (SBD) to realize reverse conduction and the double-heterojunction to enhance breakdown voltage (BV). Compared with the inherent reverse conduction capability of the conventional HEMT (Con. HEMT), the built-in SBD exhibits a low reverse turn-on voltage (VRT) and its VRT is independent of the threshold voltage and gate bias. At the off-state, the fixed positive and negative polarization charges form the polarization superjunction (PSJ). Therefore, the depletion region is extended and more uniform E-field distribution is obtained. Experimental results show that the RC-PSJ-HEMT achieves a low VRT of 0.68 V, which decreases 69.1% compared with that of the Con. HEMT. The BV of the RC-PSJ-HEMT (with 7.5 µm LGD) is increased to 723 V from 202 V of the Con. HEMT.

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“…Compared to bulk doping, the two-dimensional electron gas (2DEG) with high electron mobility and high carrier concentration can be acquired at AlGaN/GaN interface due to its spontaneous polarization and piezoelectric polarization [15][16][17]. However, according to related reports, the SBDs based on the AlGaN/GaN heterostructure exhibit large J r because the 2DEG channel is hard to be pinched off at low voltage [18][19][20][21]. To solve this problem, an extended 2DEG structure was designed by the graded AlGaN/GaN heterostructure [22][23][24][25].…”

Section: Introductionmentioning

confidence: 99%

AlGaN/GaN Heterostructure Schottky Barrier Diodes with Graded Barrier Layer

Liu

Liang

Yan

et al. 2022

Advances in Condensed Matter Physics

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The AlGaN/GaN Schottky barrier diodes (SBDs) working as high-power mixer and multiplier show great potential in millimeter wave (MMW) field owing to their high breakdown voltage. Nevertheless, its further application is severely limited by large reverse leakage current (Jr) since the two-dimensional electron gas (2DEG) channel is hard to be pinched off at low voltage. To address this limitation, a graded AlGaN/GaN heterostructure is introduced to extend the 2DEG channel into a quasi-three-dimensional electron slab. By comparing the fixed Al composition AlGaN/GaN SBD, Jr of the graded AlGaN/GaN SBD is significantly reduced due to the extension of channel carriers, confirming the effective Jr suppression effect of this structure. Furthermore, on this basis, a recessed anode structure is utilized to expect a smaller Jr. The results indicated that the graded AlGaN/GaN SBDs with air-bridge structure have achieved a pretty low Jr value (1.6 × 10−13 A at -15 V), and its cutoff frequency is as high as 60.6 GHz. It is expected that such SBDs with low Jr have significant advantages in future applications.

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Theoretical and Experimental Study on AlGaN/GaN Schottky Barrier Diode on Si Substrate with Double-Heterojunction

Cited by 7 publications

References 31 publications

A low turn-on voltage AlGaN/GaN lateral field-effect rectifier compatible with p-GaN gate HEMT technology

A low turn-on voltage AlGaN/GaN lateral field-effect rectifier compatible with p-GaN gate HEMT technology

High-Voltage Polarization-Superjunction GaN HEMT With Built-In SBD for Low Reverse Conduction Loss

AlGaN/GaN Heterostructure Schottky Barrier Diodes with Graded Barrier Layer

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