Look-Up Table Approach for RF Circuit Simulation Using a Novel Measurement Technique

Abstract

Abstract-A simple and novel measurement technique to obtain three-port network-parameters of MOS transistors from two-port measurements on a single test structure is presented. The measured data is used in the form of a lookup table (LUT) for RF circuit simulation. It is shown that simulation results obtained with the LUT approach for a 2.4-GHz low-noise amplifier match very well with measurements, thus demonstrating the usefulness of the LUT approach. It is also shown that, for high frequencies, it is important to use the tables of -parameters actually measured rather than those interpolated from low-frequency measurements. This is illustrated with a tuned amplifier simulation example.

Device Design and Optimization Considerations for Bulk FinFETs

“…We use the calibrated model parameters for all the TCAD FinFET simulations reported in this paper. To further verify the validity of our TCAD tuning approach, we have simulated a 13-stage FinFET-based ring oscillator, using the lookup table (LUT) approach [14] by using the ac and dc data generated from the calibrated TCAD tool set. Here the same device dimensions as that of the fabricated device were used.…”

Device optimization of bulk FinFETs and its comparison with SOI FinFETs

“…We calibrated the parameters such as mobility and contact resistivity by benchmarking our TCAD simulations with a set of experimental data of FinFET devices [5]. To cross check the validity of our TCAD tuning exercise we performed the circuit simulation of a 41 stage ring oscillator [6] using the Look Up Table (LUT) approach [7]. The LUT data was generated from the TCAD tool using the calibrated tuned set of parameters.…”