An Improved VBIC Large-Signal Equivalent-Circuit Model for SiGe HBT With an Inductive Breakdown Network by &lt;formula formulatype="inline"&gt;&lt;tex Notation="TeX"&gt;$X$&lt;/tex&gt; &lt;/formula&gt;-Parameters

Lee, Chie-In; Lin, Yow−Jon; Lin, Wei-Cheng

doi:10.1109/tmtt.2015.2458313

Cited by 2 publications

(1 citation statement)

References 35 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Despite the level of detail of the model in Figure 7, it is still expected that the high-frequency effects will compromise the validity of the model beyond 110 GHz. Beyond this frequency, designers rely on empirical models, such as ones based on, for example, large-signal S -parameter extraction or newer X -parameters extraction (a variation of S -parameters extraction relying on a more realistic large-signal excitation [108]), rather than expanding the small-signal model to take into account more complex effects. It is thus clear that for THz research, understanding of physics phenomena is merely a beginning, and that research depends heavily on more advanced models, which are unpractical for use by hand, but replace both physical and empirical small-signal models.…”

Section: Modeling For Re-engineered Terahertz Researchmentioning

confidence: 99%

Emerging Transistor Technologies Capable of Terahertz Amplification: A Way to Re-Engineer Terahertz Radar Sensors

Božanić

Sinha

2019

Sensors

View full text Add to dashboard Cite

This paper reviews the state of emerging transistor technologies capable of terahertz amplification, as well as the state of transistor modeling as required in terahertz electronic circuit research. Commercial terahertz radar sensors of today are being built using bulky and expensive technologies such as Schottky diode detectors and lasers, as well as using some emerging detection methods. Meanwhile, a considerable amount of research effort has recently been invested in process development and modeling of transistor technologies capable of amplifying in the terahertz band. Indium phosphide (InP) transistors have been able to reach maximum oscillation frequency (fmax) values of over 1 THz for around a decade already, while silicon-germanium bipolar complementary metal-oxide semiconductor (BiCMOS) compatible heterojunction bipolar transistors have only recently crossed the fmax = 0.7 THz mark. While it seems that the InP technology could be the ultimate terahertz technology, according to the fmax and related metrics, the BiCMOS technology has the added advantage of lower cost and supporting a wider set of integrated component types. BiCMOS can thus be seen as an enabling factor for re-engineering of complete terahertz radar systems, for the first time fabricated as miniaturized monolithic integrated circuits. Rapid commercial deployment of monolithic terahertz radar chips, furthermore, depends on the accuracy of transistor modeling at these frequencies. Considerations such as fabrication and modeling of passives and antennas, as well as packaging of complete systems, are closely related to the two main contributions of this paper and are also reviewed here. Finally, this paper probes active terahertz circuits that have already been reported and that have the potential to be deployed in a re-engineered terahertz radar sensor system and attempts to predict future directions in re-engineering of monolithic radar sensors.

show abstract

Section: Modeling For Re-engineered Terahertz Researchmentioning

confidence: 99%