Local Vibrational Mode Absorption of Hydrogen and Oxygen Centres in LEC‐Grown GaP and GaAs

Ulrici, B.; Stedman, R.; Ulricix, W.

doi:10.1002/pssb.2221430251

Cited by 18 publications

(2 citation statements)

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“…In LEC-grown GaAs, a series of sharp vibrational lines due to stretching modes of As-H bonds have been found in the frequency region 2000-2060 cm −1 that belong to the earliest reported ones [162,[167][168][169]. Some of them are shown in figure 31.…”

Section: Hydrogen In Group III Vacanciesmentioning

confidence: 89%

Hydrogen-impurity complexes in III–V semiconductors

Ulrici¹

2004

Rep. Prog. Phys.

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This review summarizes the presently available knowledge concerning hydrogen-impurity complexes in III-V compounds. The impurities form shallow acceptors on group III sites (Be, Zn, Cd) and on group V sites (C, Si, Ge) as well as shallow donors on group V sites (S, Se, Te) and on group III sites (Si, Sn). These complexes are mainly revealed by their hydrogen stretching modes. Therefore, nearly all information about their structure and dynamic properties is derived from vibrational spectroscopy. The complexes of shallow impurities with hydrogen have been most extensively investigated in GaAs, GaP and InP. This holds also for Mg-H in GaN. The complexes exhibit a different microscopic structure, which is discussed in detail. The isoelectronic impurity nitrogen, complexed with one hydrogen atom, is investigated in detail in GaAs and GaP. Those complexes can exist in different charge states. The experimental results such as vibrational frequencies, the microscopic structure and the activation energy for reorientation for many of these complexes are in very good agreement with results of ab initio calculations. Different types of oxygen-hydrogen complexes in GaAs and GaP are described, with one hydrogen atom or two hydrogen atoms bonded to oxygen. Three of these complexes in GaAs were found to be electrically active.

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Section: Hydrogen In Group III Vacanciesmentioning

confidence: 89%

Hydrogen-impurity complexes in III–V semiconductors

Ulrici¹

2004

Rep. Prog. Phys.

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“…1), which have never been observed in the great variety of other LEC-grown GaP samples (semi-insulating, n or p-conducting) without detectable silicon content. These two lines have been known for more than a decade [12], but their origin remains unclarified. Both lines can be measured up to room temperature (positions at 2168.6 and 2184.1 cm -1 ), confirming their vibrational nature.…”

Section: Methodsmentioning

confidence: 98%

Hydrogen passivation of the Si_Ga donor in GaP

Ulrici

Clerjaud

Côté

2002

Physica Status Solidi (b)

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In LEC‐grown GaP doped with silicon, two vibrational absorption lines are measured at 2175.1 and 2190.3 cm–1 (T = 7 K). These lines are due to H stretching modes where hydrogen passivates SiGa donors. Uniaxial stress experiments show that the SiGa complex responsible for the 2175.1 cm–1 line has trigonal symmetry and is the isolated passivated SiGa. The complex creating the 2190.3 cm–1 line has the symmetry Cs and contains additionally a BGa with the four constituents located in an {110} mirror plane. Therefore, also the structure of the group‐IV donohydrogen complexes is in GaP different from that observed in GaAs.

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