Depth dependence of localized mode absorptions in proton-implanted InP

Riede, V.; Sobotta, H.; Neumann, H.; Ascheron, C.; Neelmeijer, C.; Schindler, Axel

doi:10.1002/pssa.2211160249

Cited by 7 publications

(1 citation statement)

References 9 publications

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“…This explanation is consistent with the fact that this mode was never observed in works where H-passivated surfaces were studied. The 2198 cm −1 mode is very close to the LVM at 2206 cm −1 measured by Fischer et al and in perfect agreement with the mode measured by Riede et al [23][24][25][26] In both references, this mode is attributed to P -H vibrations of a hydrogen atom localized in a cation vacancy, as depicted in Fig. 7͑b͒.…”

Section: Discussionsupporting

confidence: 89%

Spectroscopic studies of the mechanism for hydrogen-induced exfoliation of InP

et al. 2005

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The motion and bonding configurations of hydrogen in InP are studied after proton implantation and subsequent annealing, using Fourier transform infrared ͑FTIR͒ spectroscopy. It is demonstrated that, as implanted, hydrogen is distributed predominantly in isolated pointlike configurations with a smaller concentration of extended defects with uncompensated dangling bonds. During annealing, the bonded hydrogen is released from point defects and is recaptured at the peak of the distribution by free internal surfaces in di-hydride configurations. At higher temperatures, immediately preceding exfoliation, rearrangement processes lead to the formation of hydrogen clusters and molecules. Reported results demonstrate that the exfoliation dynamics of hydrogen in InP and Si are markedly different, due to the higher mobility of hydrogen in InP and different implant-defect characteristics, leading to fundamental differences in the chemical mechanism for exfoliation.

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Section: Discussionsupporting

confidence: 89%

Spectroscopic studies of the mechanism for hydrogen-induced exfoliation of InP

et al. 2005

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Influence of proton implantation on the properties of CuInSe₂ single crystals (II)

Yakushev

Neumann²,

Tomlinson

et al. 1994

Cryst. Res. Technol.

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Copper deficient p-type conducting CuInSe, single crystals were implanted with 40 keV protons in the fluence range from 2.5. lOI4 to 1.5. 10l6 cm72. Over the whole fluence range the implanted layers were n-type conducting which is ascribed to passivation of the acceptors due to copper vacancies and formation of donors by hydrogen atoms located at interstitial positions. The thermal stability of the conductivity changes due to proton implantation is limited to temperatures below 100 "C.Kupferarme p-leitende CuInSe,-Einkristalle wurden mit Protonen der Energie von 40 keV im Dosisbereich von 2,5 . l O I 4 bis 1,5 . 10l6 cm-' implantiert. Die implantierten Schichten waren im gesamten Dosisbereich n-leitend, was einer Passivierung der durch Kupfervakanxen bedingten Akzeptoren und der Bildung von Donatoren durch auf Zwischengitterpliitzen eingebaute Wasserstoffatome zugeschrieben wird. Die thermische Stabilitat der durch die Protonenimplantation verursachten Leitfahigkeitsanderungen ist auf Temperaturen unterhalb 100 "C beschrankt.

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