The energy spectra of the mercury vacancy, the most common acceptor in HgCdTe material, is studied via numerical calculations and low temperature photoconductivity (PC) measurements of 'vacancy-doped' HgCdTe films with low cadmium content. Since the Hg vacancy is known to be a double acceptor, the model for the helium atom was adopted for degerate valence band of zinc blende semiconductors to classify the observed PC bands. This approach provides a fairly good description of the photoionization of both neutral and singly-ionized vacancy when the central cell potential is taken into account.

In Ref. 1 the photoluminescence due to electron-hole recombination via deep donor-acceptor pairs ͑DAP's͒ in CuGaSe 2 and in CuInS 2 crystals was investigated experimentally. For the emission spectrum analysis it was stated that, for otherwise similar pairs but with the donor-acceptor separation varying-r 1 and r 2 , respectively-a difference ⌬E 12 in the emission energies would be expected

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