The ability of hydrogen t o passivate shallow-level as well as deep-level defects in s.emiconductors has been widely investigated for silicon and recently also for GaAs (see /1/ and references therein). Very recently the first strong suggestion was found by IR absorption spectroscopy that hydrogen centres a r e also present in GaAs and InP grown by the liquid encapsulation Czochralski (LEC) technique /2/. Oxygen on a phosphorous site (0 ) forms a deep donor in
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