Limitations of shift-and-ratio based L/sub eff/ extraction techniques for MOS transistors with halo or pocket implants

Direct measurement and characterization of n+ superhalo implants in a 120 nm gate-length Si metal–oxide–semiconductor field-effect transistor using cross-sectional scanning capacitance microscopy

“…Electrical characterization of deep-submicron devices currently includes application of the shift-and-ratio method 12 to extract an effective channel length (L eff ). L eff describes the quantity of gate-controlled current a short-channel device delivers in reference to the long-channel device, and is not a physical parameter.…”

Ultimate sub-25 nm gate length NMOSFETs transport at 293 and 77 K

“…This difference induces a lower µ 0 in the case of 25-30 nm transistors as compared with the values mentioned above. Such mobility reduction is reinforced in the case of haloimplanted devices [13] which should explain (along with the difference of threshold voltage) the greater increase of I on at 77 K observed on WoH transistors as compared with WiH transistors. Consequently, even when the mobility degradation at high normal field is not considered, the low (longitudinal and transverse) field mobility µ 0 is relatively low at both temperature, 293 and 77 K. As µ 0 represents roughly the maximum of available mobility (because it does not include the gate influence), it implies an important limitation for the mean-free path length and the ballistic transport.…”

Degradation of 1/f noise in short channel MOSFETs due to halo angle induced VT non-uniformity and extra trap states at interface

“…For very long channel devices, halo implant induced non-uniformity of threshold voltage is not significant and then from the long channel noise data we can extract the oxide trap density. Following the typical approach followed in literature [16][17][18][19][20] and using this trap density number and extracted L 1 , L 2 , L 3 , V t1 , V t2 , V t3 , we calculated the expected 1/f noise for larger and smaller halo angle devices at the same dose and energy. The difference in 1/f noise between large and small halo angle device; i.e.…”