“…For very long channel devices, halo implant induced non-uniformity of threshold voltage is not significant and then from the long channel noise data we can extract the oxide trap density. Following the typical approach followed in literature [16][17][18][19][20] and using this trap density number and extracted L 1 , L 2 , L 3 , V t1 , V t2 , V t3 , we calculated the expected 1/f noise for larger and smaller halo angle devices at the same dose and energy. The difference in 1/f noise between large and small halo angle device; i.e.…”