Direct measurement and characterization of n+ superhalo implants in a 120 nm gate-length Si metal–oxide–semiconductor field-effect transistor using cross-sectional scanning capacitance microscopy

Abstract

Articles you may be interested inTwo-dimensional characterization of carrier concentration in metal-oxide-semiconductor field-effect transistors with the use of scanning tunneling microscopy Visualization of 0.1-μm-metal-oxide-semiconductor field-effect transistors by cross-sectional scanning tunneling microscopy Appl. Phys. Lett. 81, 2475 (2002); 10.1063/1.1509118Boron penetration in p-channel metal-oxide-semiconductor field-effect transistors enhanced by gate ionimplantation damage Two dimensional dopant and carrier profiles obtained by scanning capacitance microscopy on an actively biased cross-sectioned metal-oxide-semiconductor field-effect transistor Comparison of two-dimensional carrier profiles in metal-oxide-semiconductor field-effect transistor structures obtained with scanning spreading resistance microscopy and inverse modeling

Two-Dimensional Carrier Profiling by Kelvin-Probe Force Microscopy

“…Scanning probe microscopy (SPM) is one of the most powerful surface analysis techniques. 3,4) Scanning capacitance microscopy (SCM) [5][6][7][8][9][10] and Kelvin-probe force microscopy (KFM) [11][12][13] are the two major operating modes of SPM for 2-D carrier/dopant distribution measurement. They are non-destructive techniques with high spatial resolution.…”

Study on channel depletion in metal‐oxide‐semiconductor field effect transistor using top‐view imaging through scanning capacitance microscopy

“…Therefore, many studies have been focused on optimizing the two-dimensional (2D) distribution of dopant ions around the channel regions. For this purpose, techniques of cross-sectional imaging of the device structures performed using scanning capacitance microscopy (SCM), [1,2] scanning spreading resistance microscopy (SSRM), [3,4] and electron holography [5] have been utilized for determining the 2D carrier distribution with nm-scale resolution. Although those techniques are capable of yielding high-spatial-resolution 2D carrier profiles around the S/D region from cross-sectional cuts of a MOSFET, measurement of the shallow channel, that is, the region just below the interface between the gate dielectrics and channel silicon, does not exhibit sufficiently good quality.…”

Scanning capacitance microscopy study of carrier depletion within grains of n‐type polycrystalline silicon

“…Scanning capacitance microscopy (SCM), which uses a conductive microprobe to detect the tiny capacitance between probe tip and sample, has been widely used to profile the carriers of Si-based devices. [1,2] Also, it has been recently reported that SCM measurements are effective for inspecting the local electrical properties of polycrystalline materials. [3] We report the results of SCM measurements together with the energy dispersive x-ray spectroscopy (EDX) for n-type poly-Si (n-poly) layers and discuss the dopant distributions within the bulk grains and grain surfaces of n-poly.…”