Articles you may be interested inTwo-dimensional characterization of carrier concentration in metal-oxide-semiconductor field-effect transistors with the use of scanning tunneling microscopy Visualization of 0.1-μm-metal-oxide-semiconductor field-effect transistors by cross-sectional scanning tunneling microscopy Appl. Phys. Lett. 81, 2475 (2002); 10.1063/1.1509118Boron penetration in p-channel metal-oxide-semiconductor field-effect transistors enhanced by gate ionimplantation damage Two dimensional dopant and carrier profiles obtained by scanning capacitance microscopy on an actively biased cross-sectioned metal-oxide-semiconductor field-effect transistor Comparison of two-dimensional carrier profiles in metal-oxide-semiconductor field-effect transistor structures obtained with scanning spreading resistance microscopy and inverse modeling
We have characterized base-layer width and dopant distributions on cleaved cross-sections of AlxGa1−xAs/GaAs heterojunction bipolar transistor (HBT) structures using a variation of electrostatic force microscopy. The contrast observed is sensitive to the local dopant concentration through variations in the depletion layer depth extending into the sample surface, and enables delineation of individual device regions within the epitaxial layer structure with nanoscale spatial resolution. In two epitaxially grown HBT structures, one with 50 nm base width and the other with 120 nm base width, we are able to delineate clearly the emitter, base, collector, and subcollector regions, and to distinguish regions within the collector differing in dopant concentration by a factor of two. We have also distinguished clearly between the base widths in these samples and have precisely measured the difference to be 63±3 nm, in excellent agreement with the nominal difference of 70±7 nm.
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