Ultimate sub-25 nm gate length NMOSFETs transport at 293 and 77 K

Device Physics and Electrical Performance of Bulk Silicon Mosfets

“…Experiments performed on ultra short devices with channel length down to 30nm have demonstrated the functionnality of such conventional N MOS transistors, and, confrrms that the DIBL is weakly temperature dependent whatever the presence ofpockets in the channel (with: WiR or without: WoH) [60].…”