Degradation of 1/f noise in short channel MOSFETs due to halo angle induced VT non-uniformity and extra trap states at interface

Low-frequency noise in downscaled silicon transistors: Trends, theory and practice

“…Third, the lowfrequency noise in MOS transistors is higher than the noise in BJTs, as one can see in Figure 15. In this figure, the data are for 134 nMOS transistors from [22,47,48,49,50,51,72,86,87,88,89,90,91,92,93,94,95,96,97,98,99,100,101,102,103,104,105,106,107,108,109,110,111,112,113,114,115,116,117,118,119,120,121,122,123], and for 53 pMOS transistors from [47,52,86,…”

“…The tunneling ∆n model for 1/f noise in MOS transistors, which was originally suggested in [85], has been followed up widely [47,48,49,50,51,52,53,54,55,56,72,74,80,82,83,87,89,91,95,101,103,106,107,110,124,126,127,128,136,137,138,139,140,141,142,143,144,145]. It assumes that some charge carriers are trapped in the depth of the gate oxide.…”

“…, (106) and FOM S VG represents input referred gate voltage PSD at 1Hz of MOS transistor of unit gate area (WL) ref =1µm 2 at low gate overdrive voltage (V GS -V T )≈0.1V. According to scaling rules, one expects that FOM S VG ∝(C ox ) −2 ∝EOT 2 , and the deviation from this proportionality can be attributed to material and technology variations via N t or D it .…”

“…We have collected data from [22,47,48,49,50,51,72,82,86,87,88,89,90,91,92,93,95,96,97,98,99,100,101,102,103,104,105,106,107,108,109,110,111,112,149] for nMOS transistors and from [47,52,86,88,94,95,96,97,100,102,104,105,109,124,125,126,…”

Analytical Modeling of Flicker Noise in Halo Implanted MOSFETs

“…However, such strong halo implants have been found to be detrimental to analog performance [1], [2] including 1/f noise [3], [4] in particular for long channel devices [5]. The degradation of 1/f noise has been attributed to extra trap states generated due to implantation process [3], and/or threshold voltage variation along the channel [4]. Due to this reason noise behavior in strong pocket devices are significantly different than in uniformly doped devices.…”