Low-frequency noise in downscaled silicon transistors: Trends, theory and practice

Marinov, O.; Deen, M. Jamal; Jiménez-Tejada, J.A.

doi:10.1016/j.physrep.2022.06.005

Cited by 8 publications

(4 citation statements)

References 412 publications

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“… The development of simulation tools will also benefit the SPAD modeling process. Currently, TCAD is commonly used for simulating electric parameters of SPADs, including the electric field distributions, ionization coefficients, and breakdown voltage, but not their noise performance [ 121 ]. However, these parameters need to be exported to be further processed by other software, such as MATLAB.…”

Section: Research Challengesmentioning

confidence: 99%

Modeling for Single-Photon Avalanche Diodes: State-of-the-Art and Research Challenges

Qian

Jiang

Elsharabasy

et al. 2023

Sensors

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With the growing importance of single-photon-counting (SPC) techniques, researchers are now designing high-performance systems based on single-photon avalanche diodes (SPADs). SPADs with high performances and low cost allow the popularity of SPC-based systems for medical and industrial applications. However, few efforts were put into the design optimization of SPADs due to limited calibrated models of the SPAD itself and its related circuits. This paper provides a perspective on improving SPAD-based system design by reviewing the development of SPAD models. First, important SPAD principles such as photon detection probability (PDP), dark count rate (DCR), afterpulsing probability (AP), and timing jitter (TJ) are discussed. Then a comprehensive discussion of various SPAD models focusing on each of the parameters is provided. Finally, important research challenges regarding the development of more advanced SPAD models are summarized, followed by the outlook for the future development of SPAD models and emerging SPAD modeling methods.

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Section: Research Challengesmentioning

confidence: 99%

Modeling for Single-Photon Avalanche Diodes: State-of-the-Art and Research Challenges

Qian

Jiang

Elsharabasy

et al. 2023

Sensors

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“…In particular, these transistors are present in several types of non-volatile memories, such as the organic phase-change memory transistors (OPCMTs) [9], transistor-based organic flash memories [5,10], organic resistive random-access memories (RRAMs) [11][12][13], organic ferroelectric field-effect-transistors [14][15][16][17], and magnetoresistive random-access memory (MRAM) [18]. Organic devices can also be found in optoelectronic memory applications, used in image capturing, information recording, or logic data processing, where the devices combine the functions of electrical memory with photodetection [19][20][21][22][23][24][25][26].…”

Section: Introductionmentioning

confidence: 99%

“…Many of the memory transistors are based on hysteresis effects present in their electrical characteristics, in which the charge trapping at the semiconductor-dielectric interface in both metal-oxidesemiconductor field-effect transistors (MOSFETs) or TFTs plays an important role [23,25,[27][28][29][30][31], apart from affecting its low-frequency noise and light-sensitive characteristics [19][20][21][22]. While it is considered a desirable feature in memory devices, hysteresis in the electrical characteristics of other devices can be a serious constraint, in particular in transistors in which electrical stability is a requirement for proper performance [32][33][34].…”

Section: Introductionmentioning

confidence: 99%

Compact Modeling of Hysteresis in Organic Thin-Film Transistors

Romero,

Jiménez-Tejada,

Picos

et al. 2024

Preprint

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In this work, we propose a model that describes the temporal evolution of the threshold voltage and trapped charge density in Thin-Film Transistors (TFTs) under dynamic conditions, paving the way for the characterization and modeling of memory transistors. The model is expressed as a first-order differential equation for the trapped charge density, which is controlled by a time constant and an independent term proportional to the drain current. The time-dependent threshold voltage is introduced in a previously developed compact model for TFTs with special consideration to the contact effects. The combination of both models and the use of an evolutionary parameter extraction procedure allow for reproducing the experimental dynamic behavior of TFTs. The results of the model and the evolutionary procedure have been validated with published experimental data of pentacene-based transistors. The procedure is able to simultaneously reproduce three kinds of experiments with different initialization routines and constraints in each of them: output and transfer characteristics with hysteresis and current transients characteristics. ✩ The authors acknowledge support from the project PID2022-139586NB-44 funded by MCIN/AEI/10.13039/501100011033 and FEDER, EU. Funding for open access charge: Universidad de Granada / CBUA.

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“…The performance of all electronic devices, including diodes [35,36], bipolar junction transistors [37,38], field effect transistors (FETs) [39][40][41], metal oxide semiconductor field effect transistors (MOSFETs) [42], even optoelectronic devices such as light emitting diodes (LEDs) [43][44][45], lasers [46][47][48], solar cells [49][50][51] and photodetectors [52][53][54] depend upon the charge transport within the device material. The charge carriers in semiconductors are electrons and holes, which are available in the conduction band and valence band respectively.…”

Section: Introductionmentioning

confidence: 99%

Review on Charge Carrier Transport in Inorganic and Organic Semiconductors

Morab,

Sundaram,

Pivrikas

2023

Coatings

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Inorganic semiconductors like silicon and germanium are the foundation of modern electronic devices. However, they have certain limitations, such as high production costs, limited flexibility, and heavy weight. Additionally, the depletion of natural resources required for inorganic semiconductor production raises concerns about sustainability. Therefore, the exploration and development of organic semiconductors offer a promising solution to overcome these challenges and pave the way for a new era of electronics. New applications for electronic and optoelectronic devices have been made possible by the recent emergence of organic semiconductors. Numerous innovative results on the performance of charge transport have been discovered with the growth of organic electronics. These discoveries have opened up new possibilities for the development of organic electronic devices, such as organic solar cells, organic light-emitting diodes, and organic field-effect transistors. The use of organic materials in these devices has the potential to revolutionise the electronics industry by providing low-cost, flexible, and lightweight alternatives to traditional inorganic materials. The understanding of charge carrier transport in organic semiconductors is crucial for the development of efficient organic electronic devices. This review offers a thorough overview of the charge carrier transport phenomenon in semiconductors with a focus on the underlying physical mechanisms and how it affects device performance. Additionally, the processes of carrier generation and recombination are given special attention. Furthermore, this review provides valuable insights into the fundamental principles that govern the behaviour of charge carriers in these materials, which can inform the design and optimisation of future devices.

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Low-frequency noise in downscaled silicon transistors: Trends, theory and practice

Cited by 8 publications

References 412 publications

Modeling for Single-Photon Avalanche Diodes: State-of-the-Art and Research Challenges

Modeling for Single-Photon Avalanche Diodes: State-of-the-Art and Research Challenges

Compact Modeling of Hysteresis in Organic Thin-Film Transistors

Review on Charge Carrier Transport in Inorganic and Organic Semiconductors

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