Leakage paths identification in NVM using biased data retention

Postel-Pellerin, J.; Laffont, R.; Micolau, G.; Lalande, F.; Régnier, A.; Bouteille, Bernard

doi:10.1016/j.microrel.2010.07.074

Cited by 5 publications

(1 citation statement)

References 11 publications

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“…The "bias retention" is the retention measurement where an external gate bias is applied [7,37,38]. Through this method it is possible to separate the contributions of the tunneling oxide and the blocking oxide in the retention deterioration characteristics.…”

Section: Understanding Data Retention Characteristicsmentioning

confidence: 99%

Charge Trapping and Reliability Properties of MONOS Memory with High-k Blocking Layer

et al. 2011

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Carrier trapping and reliability characteristics during the cycling operation of metal-oxide-nitride-oxide-semiconductor (MONOS) devices with a high-k blocking layer (Al 2 O 3 ) have been studied by measuring the injected charge during programming and erasing (P/E). The evaluated charge centroid during P/E indicates that the traps near the SiN/Al 2 O 3 interface are filled at high electric field, while bulk traps in the SiN layer are also available at low electric field. The degradation of MONOS devices in cycling operation is found to be strongly correlated with injected charge during erasing. It is indispensable to suppress hole injection, as well as lowering the electric field to improve endurance of MONOS devices. The discussion of this paper also extends to the structure of the charge trapping layer to improve both cycling endurance and retention simultaneously. Finally, we report that a high-k blocking layer has significant impact on data readout and programming characteristics through its transient dielectric properties.

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Section: Understanding Data Retention Characteristicsmentioning

confidence: 99%