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We proposed and demonstrated a new method to extract the charge centroid of metal-oxide-nitride-oxide-semiconductor (MONOS) devices. Comparing with other existing methods for charge centroid evaluation, our new method has the advantage of simplicity and the compatibility with other test sequences of memory cell capacitors. Using our method, we investigated the dependence of charge centroid on the thickness of SiN layer. It is found that the charge centroid of the 14-nm-thick SiN MONOS is located around the middle of the SiN layer, while the 5-nm-thick SiN MONOS has the centroid at the SiN/Al 2 O 3 interface. These results indicate that the available trap sites during program operation are dependent on the thickness of the SiN layer. #

The diffusive propagation of electromagnetic waves in an absorbing random medium is studied and the localization corrections to the diffusion coefficient are calculated. The differences between absorption and inelastic scattering are discussed. Unlike inelastic scattering which introduces a cut-off length into the diffusion coefficient without affecting the total intensity, absorption reduces the intensity but cancels out of the diffusion coefficient. It is predicted that a sharp mobility edge can exist in a sufficiently strongly disordered medium even in the presence of a significant degree of absorption. Novel scaling properties of the transmitted waves at the mobility edge are predicted.