Leakage current mechanisms in Hydrogen-passivated fine-grain polycrystalline Silicon on insulator MOSFET's

Madan, Siddharth; Antoniadis, D.A.

doi:10.1109/t-ed.1986.22702

Cited by 46 publications

(10 citation statements)

References 19 publications

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“…4, I L increases linearly with W. This resistive component, dominant at low V GS , is believed to be controlled by diffusion of holes in the bulk channel and, therefore, the minimum level of the resistive current is determined by their peak concentration. 15 Thus, the increase in resistive leakage with V GS can be attributed to the increase in the peak concentration of holes in the bulk. This, we believe, explains the decrease in the activation energy from 0.77 to 0.72 eV for V SD = 5 V, as observed in Fig.…”

Section: Leakage Current Mechanisms In Top-gate Nanocrystalline Silicmentioning

confidence: 99%

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Leakage current mechanisms in top-gate nanocrystalline silicon thin film transistors

Lee

Sazonov

Nathan

2008

Applied Physics Letters

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Section: Leakage Current Mechanisms In Top-gate Nanocrystalline Silicmentioning

confidence: 99%

“…15 Therefore, if PF emission prevails, it is expected that I L versus ͱ E pk will show a linear relationship. In Fig.…”

Section: Leakage Current Mechanisms In Top-gate Nanocrystalline Silicmentioning

confidence: 99%

Leakage current mechanisms in top-gate nanocrystalline silicon thin film transistors

Lee

Sazonov

Nathan

2008

Applied Physics Letters

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“…In view of this, considerable effort has been devoted to identifying the conduction mechanisms of the leakage current in polysilicon TFTs. [2][3][4][5][6] It has been shown that the conduction mechanism of I L is not determined by a unique mechanism but it depends on the gate bias V G , drain bias V D , device structure, and the polysilicon layer structure. All the investigations were based on the analysis of the TFT transfer characteristics at various temperatures.…”

Section: Introductionmentioning

confidence: 99%

Study of leakage current in n-channel and p-channel polycrystalline silicon thin-film transistors by conduction and low frequency noise measurements

Angelis

Dimitriadis²,

Samaras³

et al. 1997

Journal of Applied Physics

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Dependence of the leakage current on the film quality in polycrystalline silicon thin-film transistors Empirical relationship between low-frequency drain current noise and grain-boundary potential barrier height in high-temperature-processed polycrystalline silicon thin-film transistorsThe off-state current in n-and p-channel polycrystalline silicon thin-film transistors ͑polysilicon TFTs͒ is investigated systematically by conduction measurements at various temperatures and low-frequency noise measurements at room temperature. It is demonstrated that the leakage current is controlled by the reverse biased drain junction. The main conduction mechanisms are due to thermal generation at low electric fields and Poole-Frenkel accompanied by thermionic filed emission at high electric fields. The leakage current is correlated with the traps present in the polysilicon bulk and at the gate oxide/polysilicon interface which are estimated from the on-state current activation energy data. Analysis of the leakage current noise spectral density confirms that deep levels with uniform energy distribution in the silicon band gap are the main factors in determining the leakage current. The density of deep levels determined from noise analysis is in agreement with the value obtained from conductance activation energy analysis. The substantially lower leakage current observed in the n-channel polysilicon TFT is explained by the development of positive fixed charges at the interface near the drain junction which suppress the electric field.

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“…A great deal is known about the structural and electrical properties of laser-recrystallized polysilicon films [1,21. Laser recrystallization has been successfully used to achieve three-dimensional integration of MOSFETs [3] and diodes [4]. Related work has investigated degradation of carrier lifetimes in Si substrates after pulsed laser irradiation of overlaying polysilicon films [5,6]. Recent advanced in VLSI processing have used pulsed lasers for link blowing to achieve programmable redundancy in DRAMS [7].…”

Section: Introductionmentioning

confidence: 99%

<title>Transient laser-induced surface deformation of Si-based multilayer structures</title>

Chun

Walser

et al. 1993

SPIE Proceedings

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Transient thermal expansion, heat generation and conduction, nonlinear laser heating and subsequent melting behaviors of polysificon/oxide/silicon wafer 'sandwich' structures have been investigated via a laser pump-probe technique. Laser pmcessing, damage, and characterization of bulk semiconductor materials has been extensively investigated. However, less is known about the mechanisms of laser-induced damage for multilayer structures such as CCD imaging arrays. In order to develop damage resistant sensors and better isolation for sensors used in laser environments, it is necessary to understand the processes contributing to the laser hardness and damage of these sensors. We designed experiments to measure the transient thermomechanical and laser-damage characteristics of multilayer systems that resemble CCD devices. The final objective was to gain some insight into the dominant mechanisms responsible for laser-induced degradation in CCD imaging arrays and devices of similar structures. Positive identification of a precursor event signaling the onset of catastrophic damage and identification of the weakest link elements on the sensor array will be essential for making design or processing modifications to improve hardness. It is our goal in this paper to contribute to the above objectives by describing investigations of laser-induced damage to silicon-based multilayer structures. We performed single and multiple shot experiments to obtain morphological damage thresholds for a sample set of various isolation oxide and polysilicon layer thickness. The transient photothermal deflection (TPD) technique that we employed consisted of a 10 ns pulsed Nd: YAG pump laser source at 1064 nm wavelength with a 10 Hz repetition rate. A cw HeNe laser was to probe the localized, timedependent slope change of the illuminated surface. The deflection of the reflected probe beam was detected by a fast bicell photodiode with temporal resolution of 20 ns. The deformation signals were recorded by a digital camera system and highspeed oscilloscope. The waveforms were later analyzed to extract the peak angular deflection and the vertical displacement based on the geometry of the Gaussian irradiation profile. Vertical displacement down to a few nm could be detected. Measured displacement and surface temperature were then compared to computer simulations at different fluence levels for bulk silicon. They were found to be in excellent agreement to each other. In addition, single shot experiments were performed to obtain their respective damage onsets for various Si-based multilayer samples. Results indicated that the top polysilicon layer received the major portion of the photon energy deposited before substantial heat was conducted into the Si substrate. And it had a lower melt onset than bulk silicon due to strong nonlinear absorption. Laser-induced damage to polysilicon layer was also related to film microstructures and degree of thermal isolation which depended on the oxide thickness. Measurement of peak surface deformation at subthresho...

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Leakage current mechanisms in Hydrogen-passivated fine-grain polycrystalline Silicon on insulator MOSFET's

Cited by 46 publications

References 19 publications

Leakage current mechanisms in top-gate nanocrystalline silicon thin film transistors

Leakage current mechanisms in top-gate nanocrystalline silicon thin film transistors

Study of leakage current in n-channel and p-channel polycrystalline silicon thin-film transistors by conduction and low frequency noise measurements

<title>Transient laser-induced surface deformation of Si-based multilayer structures</title>

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