Leakage current mechanisms in top-gate nanocrystalline silicon thin film transistors

Lee, Hyun Jung; Sazonov, Andrei; Nathan, Arokia

doi:10.1063/1.2887882

Cited by 10 publications

(8 citation statements)

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“…Chakraborty et al [42] obtienen películas de ZrO 2 por la técnica de PECVD con corrientes de fuga de 10 −1 a 10 −2 A/cm 2 a 3 V como dieléctrico de compuerta. Qiang Lu et al [43] reportan películas ultradelgadas de Ta 2 O 5 por CVD sobre sustratos de silicio con corrientes de fuga de 10 −5 A/cm 2 a 3 V. Estos valores bajos de corriente de fuga no causarán una pérdida de señal en circuitos electrónicos, además que evitarán un gran consumo de energía [45]. Esto ayuda a la búsqueda de un dieléctrico de compuerta con excelentes parámetros tanto en densidad de carga como en la corriente de fuga [46].…”

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Transistores de Película Delgada Basados en Oxido de Zinc por Spray Pyrolysis Ultrasónico de Alta Frecuencia a Baja Temperatura

et al. 2021

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Using first-principles calculations based on density functional theory, structural, elastic, electronic and thermoelectric properties of laves phase LaCo2 intermetallic compound with prototype MgCu2 are stated in this paper. The optimized lattice constant by structural optimization is found to be rationally compatible with the experimental lattice constant. The Generalized Gradient Approximation (GGA) +Hubbard model was incorporated to evaluate the exact electronic structure. Elastic properties such as, elastic constants, bulk modulus B, shear modulus G, Young’s modulus E, and Poisson ratio ν have been determined using the Voigt–Reuss– Hill approximation. The ductility nature appears in both values of Cauchy pressure and Pugh’s ratio. The band structures and the Cauchy pressure show that the material behaves as metallic. In addition, semi-classical Boltzmann theory is used to verify the applicability of the material for thermoelectric applications. Calculations depict that the spin-up/down transport coefficients are temperature-dependent. It has been found that LaCo2 has a high Seebeck coefficient and therefore a large power factor.

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Section: Resultados Y Discusiónunclassified

Transistores de Película Delgada Basados en Oxido de Zinc por Spray Pyrolysis Ultrasónico de Alta Frecuencia a Baja Temperatura

et al. 2021

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“…Compared with a-Si TFTs, μc-Si TFTs achieve superior current drivability. However, the Ioff is of μc-Si TFTs is high, resulting in a marginal Ion/Ioff ratio of only five orders of magnitude or less [4], [5]. Similar to poly-Si TFTs, the Ioff in μc-Si TFTs is controlled by thermal emission of trapped carriers at low drain bias and by Poole-Frenkel emission at high drain bias [5].…”

Section: Introductionmentioning

confidence: 99%

“…However, the Ioff is of μc-Si TFTs is high, resulting in a marginal Ion/Ioff ratio of only five orders of magnitude or less [4], [5]. Similar to poly-Si TFTs, the Ioff in μc-Si TFTs is controlled by thermal emission of trapped carriers at low drain bias and by Poole-Frenkel emission at high drain bias [5]. A reduction in the peak electric field at the drain vicinity is an effective way to suppress high Ioff [5].…”

Section: Introductionmentioning

confidence: 99%

“…Similar to poly-Si TFTs, the Ioff in μc-Si TFTs is controlled by thermal emission of trapped carriers at low drain bias and by Poole-Frenkel emission at high drain bias [5]. A reduction in the peak electric field at the drain vicinity is an effective way to suppress high Ioff [5]. Several methods, such as employing a low-high-low band-gap structure [6] or an offset structure [7], have been proposed and applied to μc-Si TFTs to suppress the high Ioff.…”

Section: Introductionmentioning

confidence: 99%

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P‐1.9: Characterization of Self‐Aligned Top‐Gate Microcrystalline Silicon Thin Film Transistors

Zhang

Yan

Deng

et al. 2018

Symp Digest of Tech Papers

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Self‐aligned top‐gate microcrystalline silicon (µc‐Si) thin film transistors (TFTs) are fabricated and characterized. By replacing high‐temperature SiO2 with low‐temperature SiO2, the performance of self‐aligned top‐gate µc‐Si TFTs can be greatly improved due to the prevention of hydrogen diffusion into the air. The bridged grain (BG) structure is successfully applied to self‐aligned top‐gate µc‐Si TFTs for the first time. By employing the BG doping inside the channel, all device characteristics are improved in self‐aligned top‐gate µc‐Si TFTs.

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“…However, off-current level is rather high in nc-Si TFT as compared with aSi:H TFT. Several efforts were done for the suppression of leakage current level of nc-Si TFT [5][6][7]. However, since nc-Si structure has special feature of columnar crystalline growth, which may attribute the conduction mechanism, intrinsic properties of nc-Si film with various thicknesses need to be concretely.…”

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The effect of active-layer thickness on the characteristic of nanocrystalline silicon thin film transistor

et al. 2009

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We fabricated nc-Si TFTs in order to investigate the effect of the active-layer thickness on the characteristic of the nc-Si TFT. Bottom gate nc-Si TFTs were fabricated at 350 o C using ICP-CVD. The thicknesses of the nc-Si layer were remained to 700, 1200 and 1700 Å. As the active-layer thickness increases, the mobility and the on-current level were not altered. However, the off-current level increased considerably and on/off ratio decreased. It may be attributed to highly doped characteristic of thick nc-Si film. As the nc-Si film thicker, the conductivity increases considerably and the Fermi level approaches to the conduction band minimum, which indicates the increases of doping level. The oxygen concentration shows high level of unintentional doping. Also, columnar growth of nc-Si film makes that the crystallinity of top region is much higher than that of bottom region. So, the conductivity of thick nc-Si film becomes high compared to that of thin nc-Si film. The structure of the nc-Si TFT with thick ncSi film can be similar to the serial connection of N+, N-and N+ resistance, so that it suffers difficulty to suppress the off current and to secure high on/off ratio. Therefore, the off current can be suppressed by thinning of the high conducting active nc-Si layer and nc-Si TFT with channel thickness of 700 Å shows good on/off characteristic. It is deduced that bottom gate nc-Si TFT is necessary to have intrinsic channel layer as well as thin channel layer to reduce the leakage current. INTRODUCTIONNanocrystalline silicon (nc-Si) thin film transistor (TFT) has attracted considerable attention [1]. It can be fabricated with rather simple process as compared with polycrystalline silicon (poly-Si) TFT since it doesn't need additional recrystallization process. And it also shows better uniformity while recrystallization process causes severe non-uniformity problem in polySi TFT [2,3]. nc-Si TFT also has advantage compared to hydrogenated amorphous silicon (aSi:H) TFT due to better electrical stability [4].nc-Si TFT can be fabricated by simple process compatible to widely used a-Si:H TFT fabrication process. However, off-current level is rather high in nc-Si TFT as compared with aSi:H TFT. Several efforts were done for the suppression of leakage current level of nc-Si TFT [5][6][7]. However, since nc-Si structure has special feature of columnar crystalline growth, which may attribute the conduction mechanism, intrinsic properties of nc-Si film with various thicknesses need to be concretely.The purpose of our work is to report the effect of active-layer thickness on the off-current characteristic of nc-Si TFT. Using etch-back process, nc-Si TFTs with various active-layer thicknesses were fabricated employing inductively coupled plasma chemical vapor deposition (ICP-CVD). The property of nc-Si film was analyzed from conductivity and activation energy.

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Leakage current mechanisms in top-gate nanocrystalline silicon thin film transistors

Cited by 10 publications

References 18 publications

Transistores de Película Delgada Basados en Oxido de Zinc por Spray Pyrolysis Ultrasónico de Alta Frecuencia a Baja Temperatura

Transistores de Película Delgada Basados en Oxido de Zinc por Spray Pyrolysis Ultrasónico de Alta Frecuencia a Baja Temperatura

P‐1.9: Characterization of Self‐Aligned Top‐Gate Microcrystalline Silicon Thin Film Transistors

The effect of active-layer thickness on the characteristic of nanocrystalline silicon thin film transistor

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