Laser SEL sensitivity mapping of SRAM cells

Burnell,; Chugg,; Harboe-Sorensen,

doi:10.1109/radecs.2009.5994668

Cited by 7 publications

(3 citation statements)

References 6 publications

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“…Pulsed lasers have been used for many years in ground testing of SEEs. One of the advantages of pulsed laser SEE test is that it can easily locate and map the SEL sensitive regions of ICs [16]- [18]. Therefore, pulsed laser could be used to determine the number of SEL SV in device.…”

Section: Introductionmentioning

confidence: 99%

Correction of Single Event Latchup Rate Prediction Using Pulsed Laser Mapping Test

Han

Feng

et al. 2015

IEEE Trans. Nucl. Sci.

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Most classical approaches of single event effect rate prediction are based on the rectangular parallelepiped model of sensitive volume. However it is not clear about the number of sensitive volume in the device when predicting the in-flight single event latchup rate. As for memory device, there are two empirical practices to deal with the latchup sensitive volume number: one assumes that there is only one sensitive volume in the whole device; another assumes that there are as much sensitive volumes as the number of memory cells. The latchup sensitive volume number of a 4M-bits SRAM is determined as 63360 using pulsed laser mapping test in this work first. Based on the two assumed and measured sensitive volume number, the single event latchup rates of the device are calculated and compared. The results show that pulsed laser could be a powerful tool to obtain the real sensitive volume number in the device, which is significant for single event latchup rate prediction. The latchup rate will be either overestimated or underestimated with the assumption of the sensitive volume number as one or as much as the number of memory cells.Index Terms-In-flight rate, pulsed laser, sensitivity mapping, single event latchup (SEL), SRAM.

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Section: Introductionmentioning

confidence: 99%

Correction of Single Event Latchup Rate Prediction Using Pulsed Laser Mapping Test

Han

Feng

et al. 2015

IEEE Trans. Nucl. Sci.

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“…The laser Two-Photon Absorption (TPA) technique is known to allow the injection of a high electron-hole pair density, concentrated in a localized volume inside the device [5]- [7]. It has been used to study the in-depth sensitivity of Single Event Transient in linear technology [5], [6] and Single Event Latchup in highly integrated memory [7], [8]. A first study of the charge collection volume of vertical power MOSFETs has been given in [9].…”

Section: Introductionmentioning

confidence: 99%

Investigation on the Single Event Burnout Sensitive Volume Using Two-Photon Absorption Laser Testing

Darracq¹,

Mbaye²,

Azzopardi³

et al. 2012

IEEE Trans. Nucl. Sci.

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“…E XCELLENT laser SEE mapping results have been achieved by various organisations using arrays of focused laser pulses to map the SEE sensitivity of microchips, including SEU and latchup in memories [1], [2], sensitive volumes in analogue devices [3], [4] and SEB sensitivity in MOSFET's [5]. Some of this work has been performed by moving the laser pulse location between each successive pair of laser pulse deliveries and waiting until the microchip and the laser beam are again at rest relative to one another before delivering the next laser pulse.…”

Section: Introductionmentioning

confidence: 99%