Large Area 1200 V SiC BJTs with β&amp;gt;100 and ρ&lt;sub&gt;ON&lt;/sub&gt;&amp;lt;3 mΩcm&lt;sup&gt;2&lt;/sup&gt;

Konstantinov, A. O.; Lindgren, Anders; Zaring, Carina; Gumaelius, Krister; Reimark, Mats

doi:10.4028/www.scientific.net/msf.717-720.1123

Cited by 15 publications

(12 citation statements)

References 5 publications

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“…2 shows the specific ON-resistance of various SiC switches in comparison with modern silicon devices. Of course, this is a simplified view as the devices [14,20,[24][25][26][27][28][29][30][31][32][33][34][35] NB: For the bipolar devices R ON A was calculated as the voltage drop at a nominal current density divided by the nominal current density For the references other than the indicated see [3] www.ietdl.org…”

Section: Conclusion On Sic-switchesmentioning

confidence: 99%

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SiC and GaN devices – wide bandgap is not all the same

Kaminski

Hilt

2014

IET Circuits, Devices & Systems

114

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Silicon carbide (SiC)-diodes have been commercially available since 2001 and various SiC-switches have been launched recently. Parallelly, gallium nitride (GaN) is moving into power electronics and the first low-voltage devices are already on the market. Currently, it seems that GaN-transistors are ideal for high frequency ICs up to 1kV (maybe 2kV) and maximum a few 10A. SiC transistors are better suited for discrete devices or modules blocking 1kV and above and virtually no limit in the current but in that range they will face strong competition from the silicon insulated gate bipolar transistors (IGBTs). SiC and GaN Schottky-diodes would offer a similar performance, hence here it becomes apparent that material cost and quality will finally decide the commercial success of wide bandgap devices. Bulk GaN is still prohibitively expensive, whereas GaN on silicon would offer an unrivalled cost advantage. Devices made from the latter could be even cheaper than silicon devices. However, packaging is already a limiting factor for silicon devices even more so in exploiting the advantage of wide bandgap materials with respect to switching speed and high temperature operation. After all, reliability is a must for any device no matter which material it is made of.

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Section: Conclusion On Sic-switchesmentioning

confidence: 99%

“…Specific ON‐resistances of various silicon and SiC switches at 25°C [14, 20, 24–35]NB: For the bipolar devices R ON A was calculated as the voltage drop at a nominal current density divided by the nominal current densityFor the references other than the indicated see [3]…”

Section: Sic‐devicesmentioning

confidence: 99%

SiC and GaN devices – wide bandgap is not all the same

Kaminski

Hilt

2014

IET Circuits, Devices & Systems

114

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“…Since the early 1980 s metal-oxide-semiconductor field effect transistors (MOSFETs) have successfully replaced traditional silicon bipolar junction transistors (SiC BJT) counterparts because of improvements in input impedance, base storage charge and turn off current tail [1]. However, the recent availability of SiC BJTs has demonstrated fast switching speeds due to lack of the strong conductivity modulation within the structure [2][3][4][5]. This reduces the effective on-state resistance of the SiC BJT to be much lower than a SiC MOSFETs of the same rating.…”

Section: Introductionmentioning

confidence: 99%

Base drive energy recovery for a silicon bipolar junction transistors

Zhu

Sweet

Narayanan

2015

IET Power Electronics

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To enable fast switching of a silicon carbide bipolar junction transistor a low impedance base current path is required, traditionally implemented by a RC speed up circuit in parallel to the base resistance. For fast switching speeds the capacitance of this circuit has to be large, dissipating significant power during high frequency switching. This study demonstrates, for the first time, the implementation of an energy recovery (ER) circuit into the base drive; transferring stored energy within the pulse capacitor of the RC circuit back to the power supply. Measured performance of a 1.7 kW boost converter demonstrates an 15.1% reduction in base power losses of the proposed driver when compared with a conventional benchmark operated at a switching frequency of 143 kHz.

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“…However, ion implantation with the mandatory following high-temperature annealing increases the number of defects which may severely decrease the current gain (β) and reliability of the device under stress conditions [11,12]. Implantation-free devices with very low R ON have been reported which have been fabricated by dry etching and lift-off processes to avoid using ion implantation [13][14][15][16][17][18]. The former devices degrade with increased on-resistance and current capability because of the implantation defects, while the latter have large deviation from the ideal V B mainly because of variations in the etching and doping process steps as well as the misalignments.…”

Section: Introductionmentioning

confidence: 99%

4.5-kV 20-mΩ.cm<sup>2</sup> Implantation-Free 4H-SiC BJT with Trench Structures on the Junction Termination Extension

Elahipanah

Salemi

Zetterling

et al. 2015

MSF

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Abstract.A single-mask junction termination extension with trench structures is formed to realize a 4.5 kV implantation-free 4H-SiC bipolar junction transistor (BJT). The trench structures are formed on the base layer with dry etching using a single mask. The electric field distribution along the structure is controlled by the number and dimensions of the trenches. The electric field is distributed by the trench structures and thus the electric field crowding at the base and mesa edges is diminished. The design is optimized in terms of the depth, width, spacing, and number of the trenches to achieve a breakdown voltage (V B ) of 4.5 kV, which is 85% of the theoretical value. Higher efficiency is obtainable with finer lithographic resolution leading to smaller pitch, and higher number and narrower trenches. The specific on-resistance (R ON ) of 20 mΩ.cm 2 is measured for the small-area BJT with active area of 0.04 mm 2 . The BV-R ON of the fabricated device is very close to the SiC limit and by far exceeds the best SiC MOSFETs.

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Large Area 1200 V SiC BJTs with β>100 and ρ<sub>ON</sub><3 mΩcm<sup>2</sup>

Cited by 15 publications

References 5 publications

SiC and GaN devices – wide bandgap is not all the same

SiC and GaN devices – wide bandgap is not all the same

Base drive energy recovery for a silicon bipolar junction transistors

4.5-kV 20-mΩ.cm<sup>2</sup> Implantation-Free 4H-SiC BJT with Trench Structures on the Junction Termination Extension

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