Abstract:To enable fast switching of a silicon carbide bipolar junction transistor a low impedance base current path is required, traditionally implemented by a RC speed up circuit in parallel to the base resistance. For fast switching speeds the capacitance of this circuit has to be large, dissipating significant power during high frequency switching. This study demonstrates, for the first time, the implementation of an energy recovery (ER) circuit into the base drive; transferring stored energy within the pulse capac… Show more
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