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Determining 4H silicon carbide electronic properties through combined use of device simulation and metal-semiconductor field-effect-transistor terminal characteristics

A detailed investigation of the dependence of the photoluminescence from porous silicon carbide on preparation conditions and starting material is presented. Porous silicon carbide prepared from different polytypes shows almost identical emission spectra, demonstrating a clear impedance of the band-gap energy of a particular SiC polytype. Emission bands with peak energies of 2.43, 2.22, 2.07, and 1.93 eV were resolved with the use of selective excitation by tuning the excitation wavelength. The origin of luminescence is suggested to relate to defect states produced at the etched surface.

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Variation of the preparation conditions of porous silicon carbide is shown to have a strong effect on the structural and electrical properties of the material obtained. A correlation has been observed between the fiber size and resistivity of porous SiC, a decrease of fiber size results in a semi-insulating material due to Fermi-level pinning to surface states. A model is proposed for the mechanism of fiber size self-regulation responsible for the porous material formation. The model relates the blocking of the fiber dissolution process to the increase of resistivity in a thin fiber due to Fermi-level pinning. We suggest that the Fermi-level pinning model is also applicable to the formation mechanism of porous silicon.