In situ substrate preparation for high-quality SiC chemical vapour deposition

Hallin, Christer; Owman, Fredrik; Mårtensson, Per; Ellison, A.; Konstantinov, A. O.; Kordina, Olof; Janzén, Erik

doi:10.1016/s0022-0248(97)00247-9

Cited by 124 publications

(91 citation statements)

References 19 publications

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“…Priority in this treatment was given for eliminating any residual oxides on the SiC substrate surface prior to the AlN growth. The low process pressure of 50 mbar is prompted to promote a low supersaturation of the SiC vapor over the heated substrate surface initiating preferential etching at crystal lattice defects and aided by hydrogen, known to generate the appearance of hexagonal-shaped etch pits at screw dislocations on the SiC surface [15]. The appearance of the SiC surface is further furnished by its exposition to NH 3 introduced at the end of the temperature ramp-down step and ahead of the TMAl introduction.…”

Section: Resultsmentioning

confidence: 99%

High-quality AlN layers grown by hot-wall MOCVD at reduced temperatures

Kakanakova‐Georgieva

Nilsson

Janzén

2012

Journal of Crystal Growth

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We report on a growth of AlN at reduced temperatures of 1100 o C and 1200 o C in a horizontaltube hot-wall metalorganic chemical vapor deposition reactor configured for operation at temperatures of up to 1500-1600 o C and using a joint delivery of precursors. We present a simple route -as viewed in the context of the elaborate multilayer growth approaches with pulsed ammonia supply -for the AlN growth process on SiC substrates at the reduced temperature of 1200 o C. The established growth conditions in conjunction with the particular in-situ intervening SiC substrate treatment are considered pertinent to the accomplishment of crystalline, relatively thin, ~ 700 nm, single AlN layers of high-quality. The feedback is obtained from surface morphology, cathodoluminescence and secondary ion mass spectrometry characterization.

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Section: Resultsmentioning

confidence: 99%

High-quality AlN layers grown by hot-wall MOCVD at reduced temperatures

Kakanakova‐Georgieva

Nilsson

Janzén

2012

Journal of Crystal Growth

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“…Silane (100%), ethylene (100%) or MTS are used as precursors, because to the liquid state of MTS at room temperature is carrier gas bubbling used to transport MTS into the gas mixture. Different conditions may be used during the temperature ramp-up: A carbon-rich ambient has been proposed as preferable for the growth on 8° offaxis substrate [8] when HCl is not available, however small amounts of HCl gas during the temperature ramp-up has also being suggested to improve the morphology of the grown layer [9]. N-type doping is achieved by adding small amounts of nitrogen gas.…”

Section: Experimental Methodsmentioning

confidence: 99%

SiC epitaxy growth using chloride-based CVD

Henry

Beyer

Pedersen

et al. 2012

Physica B: Condensed Matter

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The growth of thick epitaxial SiC layers needed for high-voltage, high-power devices is investigated with the chloride-based chemical vapor deposition. High growth rates exceeding 100 µm/h can be obtained, however to obtain device quality epilayers adjustments of the process parameters should be carried out appropriately for the chemistry used. Two different chemistry approaches are compared: addition of hydrogen chloride to the standard precursors or using methyltrichlorosilane, a molecule that contains silicon, carbon and chlorine. Optical and electrical techniques are used to characterize the layers.

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“…Hydrogen etching is often used to remove such polishing damage [14] [15] [16] [17] [18]. This method involves heating the SiC surface to 1600°-1700°C in hydrogen.…”

Section: Hydrogen Etchingmentioning

confidence: 99%