Electrical properties and formation mechanism of porous silicon carbide

Konstantinov, A. O.; Harris, Chris I.; Janzén, Erik

doi:10.1063/1.112610

Cited by 103 publications

(66 citation statements)

References 8 publications

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“…The potential of the photocurrent onset (U ph = 0 V vs. Ag/AgCl) indeed remains the same during the porous etching. Similar behaviour has been already observed on n-GaP and n-SiC [16,20].…”

Section: Ex Situ Characterizationssupporting

confidence: 80%

In situ electrochemical characterization of porous n ‐InP (100)

Santinacci

Gonçalves

David

et al. 2007

Phys. Status Solidi (c)

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Porous structures have been anodically grown onto n-InP (100) in HCl. Surface chemistry and pore morphology have been respectively studied by X-ray photoelectron spectroscopy and scanning electron microscopy but in situ electrochemical investigations have been emphasized. Capacitance and photocurrent experiments have been performed while the porous etching occurred. No modifications of the electronic structure (flat band potential remains constant) are observed during the pore formation. However, for high dissolution charges, the photocurrent spectra are sharpened because the porous films behave like electrically "dead layers".

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“…The potential of the photocurrent onset (U ph = 0 V vs. Ag/AgCl) indeed remains the same during the porous etching. Similar behaviour has been already observed on n-GaP and n-SiC [16,20].…”

Section: Ex Situ Characterizationssupporting

confidence: 80%

In situ electrochemical characterization of porous n ‐InP (100)

Santinacci

Gonçalves

David

et al. 2007

Phys. Status Solidi (c)

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“…As discussed above, the larger magnitude of e 2 as compared with the corresponding value for crystalline SiC provides evidence for larger absorptivity of the porous material. The phenomenon is most probably related to formation of a carbon rich phase as is also predicted by Konstantinov et al [5]. However, it is likely that the disordered phase also contains polycrystalline and/or amorphous SiC (see Fig.…”

Section: Resultsmentioning

confidence: 73%

Porous Anodic 4H-SiC: Thickness Dependent Anisotropy in Pore Propagation and Ellipsometric Characterization

Zangooie

Arwin

2000

phys. stat. sol. (a)

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Pores in porous 4H-SiC propagate first nearly parallel with the sample surface and gradually change direction towards the direction of the c-axis. A disordered region at the interface between crystalline SiC and the pores is encountered, which significantly influences the optical response of the material. Thickness and porosity of porous SiC as obtained using variable angle of incidence spectroscopic ellipsometry show good agreement with electron microscopy observations.

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“…However, a larger current density would enhance the nonuniformity of breakdown across the surface, resulting in the initiation of pores, as happens during Si anodization. 12,13 It is noteworthy that a balance between the formation and the removal of the oxide is also crucial for successful polishing of SiC by this process. Faster anodization will form thick porous oxide on the surface that cannot be easily removed completely during the succeeding oxide polishing step.…”

Section: Resultsmentioning

confidence: 99%

Electro-chemical mechanical polishing of silicon carbide

Bhat

Wang

et al. 2004

Journal of Elec Materi

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In an effort to improve the silicon carbide (SiC) substrate surface, a new electrochemical mechanical polishing (ECMP) technique was developed. This work focused on the Si-terminated 4H-SiC (0001) substrates cut 8°off-axis toward <1120>. Hydrogen peroxide (H 2 O 2 ) and potassium nitrate (KNO 3 ) were used as the electrolytes while using colloidal silica slurry as the polishing medium for removal of the oxide. The current density during the polishing was varied from 10 µA/cm 2 to over 20 mA/cm 2 . Even though a high polishing rate can be achieved using high current density, the oxidation rate and the oxide removal rate need to be properly balanced to get a smooth surface after polishing. A two-step ECMP process was developed, which allows us to separately control the anodic oxidation and removal of formed oxide. The optimum surface can be achieved by properly controlling the anodic oxidation current as well as the polishing rate. At higher current flow (Ͼ20 mA/cm 2 ), the final surface was rough, whereas a smoother surface was obtained when the current density was in the vicinity of 1 mA/cm 2 . The surface morphology of the as-received wafer, fine diamond slurry (0.1 µm) polished wafer, and EMCP polished wafer were studied by high-resolution atomic force microscopy (AFM).

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Electrical properties and formation mechanism of porous silicon carbide

Cited by 103 publications

References 8 publications

In situ electrochemical characterization of porous n ‐InP (100)

In situ electrochemical characterization of porous n ‐InP (100)

Porous Anodic 4H-SiC: Thickness Dependent Anisotropy in Pore Propagation and Ellipsometric Characterization

Electro-chemical mechanical polishing of silicon carbide

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